AON6424

Vgs(th) (Max) @ Id:	1.7V @ 250µA
Package / Case:	8-PowerSMD, Flat Leads
Supplier Device Package:	8-DFN (5x6)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	2W (Ta), 25W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1900pF @ 15V
Vgs (Max):	±12V
Gate Charge (Qg) (Max) @ Vgs:	32nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	8.5 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	11A (Ta), 41A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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AON6424 Application Field and Working Principle

AON6424 is a single-channel, N-Channel, enhancement-mode, field effect transistor (FET) switch. It is part of the AON (Architected On-demand) MOSFET family that offers tremendous density, performance and power efficiency over previous generations.The AON6424 provides high-level switching with low gate threshold voltage, allowing the device to support switching signals as low as 1V. This technology is ideal for a wide range of applications, including power management in notebooks, desktops, workstations, and PDAs.At the heart of the AON6424 is an advanced drain-source thermal doping technology, which improves switching performance and lowers gate-source capacitance. This technology allows for fast switching speeds that are ideal for memory systems.The AON6424 also features an enhanced ESD performance that can withstand greater electrostatic discharge damages. This ESD protection helps protect against damage caused by peripheral devices, such as USB devices, while preventing external damage to the transistor itself.To power the AON6424, the device requires a continuous supply voltage range of between 2.5 and 5.5V. The device can supply load current up to 50mA/channel and can handle peak load currents as high as 200mA/channel. The device\'s on-resistance characteristic is between 1.3 and 2.8 ohms. The AON6424 also features an active-low enable, allowing for the device to be powered down to save power when not in use. Additionally, the device offers a shutdown current of <1.5uA, which greatly extends battery life in notebook, mobile and other portable computing applications.In summary, the AON6424 is a high-performance transistor-based FET switch with a low gate threshold voltage, low on-resistance, high ESD protection, and low shutdown current characteristics. Its advanced drain-source thermal doping technology makes it an ideal choice for power management and switching applications, making it a desirable choice for modern computing devices.

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