Allicdata Part #: | AON6524-ND |
Manufacturer Part#: |
AON6524 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 30V 68A DFN5X6 |
More Detail: | N-Channel 30V 27A (Ta), 68A (Tc) 5.7W (Ta), 35.5W ... |
DataSheet: | AON6524 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 27A (Ta), 68A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 5 mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id: | 2.3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 23nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1080pF @ 15V |
FET Feature: | -- |
Power Dissipation (Max): | 5.7W (Ta), 35.5W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | 8-DFN (5x6) |
Package / Case: | 8-PowerSMD, Flat Leads |
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AON6524 is a single N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) developed by Alpha and Omega Semiconductor. This product is ideally suited for small load switching applications and has a wide range of working conditions, from Vds 2V to -100V, with a maximum current rating of 26A.
AON6524 can be used for a variety of applications, from large power supplies and portable devices to industrial electronics and medical equipment. Its low on-resistance makes it suitable for applications such as LED backlighting and DC-DC converters where efficiency is required. The device also features a low gate charge, ensuring high performance with minimal losses.
The basic operating principle of a MOSFET is based on the number of electrons that can flow through the device. It utilizes an electrical field to control its on/off state and is capable of providing fast switching operation.
To turn on the MOSFET, a positive voltage is applied to the gate-source terminal. This voltage creates an electric field in the gate oxide layer, inducing negative charge carriers (called holes) to flow into the gate oxide, forming a Metal-Oxide-Semiconductor capacitor. This results in a large electric field between the gate and the source, which pushes the negative charge carriers (electrons) away from the source, effectively creating a conductive path for current flow.
To turn off the MOSFET, the gate voltage is reversed. This causes the electric field to be reversed as well, causing the negative charge carriers (electrons) to flow away from the gate, creating a depletion region and effectively blocking current flow.
AON6524 is particularly suitable for automotive and industrial applications that require the reliable operation of a fully-protected, high current switching MOSFET. It features an integrated ESD protection diode, performs -100V avalanche ruggedness, and provides industry-leading maximum on-resistance of 0.9mΩ. Its design eliminates gate charge losses and provides fast switching performance, making it an excellent choice for high efficiency applications.
In summary, AON6524 is a reliable, low loss switching MOSFET that is well-suited for a wide range of applications. Its low on-resistance, integrated ESD protection diode, and -100V avalanche ruggedness make it an excellent choice for power supply and portable device applications.
The specific data is subject to PDF, and the above content is for reference
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