| Allicdata Part #: | AON6562-ND |
| Manufacturer Part#: |
AON6562 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Alpha & Omega Semiconductor Inc. |
| Short Description: | MOSFET N-CH 30V |
| More Detail: | N-Channel 30V 29A (Ta), 32A (Tc) 6W (Ta), 25W (Tc)... |
| DataSheet: | AON6562 Datasheet/PDF |
| Quantity: | 1000 |
| Gate Charge (Qg) (Max) @ Vgs: | 33nC @ 10V |
| Package / Case: | 8-VDFN Exposed Pad |
| Supplier Device Package: | 8-DFN (5x6) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 6W (Ta), 25W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1550pF @ 15V |
| Vgs (Max): | ±20V |
| Series: | AlphaMOS |
| Vgs(th) (Max) @ Id: | 2.4V @ 250µA |
| Rds On (Max) @ Id, Vgs: | 5 mOhm @ 20A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 29A (Ta), 32A (Tc) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Last Time Buy |
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AON6562 is a high-efficiency and low-on-resistance n-channel MOSFET. It is a single-die MOSFET that can be used in a wide range of applications.
Application Field
AON6562 can be used in a variety of power management applications, such as TV power supplies, LCD monitors, and other products that require high levels of efficiency and low on-state resistance. It is also ideal for switching applications, such as static control of DC motors, DC to DC conversion and voltage regulation. The device is capable of operating at frequencies up to 20MHz, making it suitable for use in high-frequency switching molecules.
In addition to power applications, AON6562 can be used in RF and wireless applications. As a single-die MOSFET, the device is capable of providing excellent RF performance in mobile phone and wireless networks. Its low on-state resistance and high threshold voltage make it suitable for low voltage operation and fast switching speeds.
Working Principle
AON6562 has a vertical structure, enabling it to have higher current density and higher power dissipation than traditional lateral MOSFETs. It works by controlling the flow of electric current between the Drain and Source terminals, based on the voltage applied to the Gate terminal.
When a voltage is applied to the gate of AON6562, electrons are drawn to the gate from the Source terminal and holes from the Drain terminal. This creates a conductive channel between the Drain and the Source, allowing current to flow. The Gate voltage determines the size and voltage of the current that can flow through the device.
Due to its high voltage and current capability, low on-state resistance, and low threshold voltage, AON6562 is suitable for applications that require high efficiency, low power dissipation and fast switching.
The specific data is subject to PDF, and the above content is for reference
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AON6562 Datasheet/PDF