AON7202_101

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

AON7202_101 is a type of single field effect transistor (FET) typically used for low side switching applications, such as in automotive applications. The FET is offered in a P-channel package, which offers improved power efficiency for low side switching applications. It is a good choice for automotive applications requiring low side switching, such as lamp control and digital motor-control drivers. The AON7202_101 offers an excellent combination of low RDS(on) and low Qg, enabling efficient low side switching.

The structure of the AON7202_101 FET is similar to other MOSFETs, but it differs in that it can be driven from both sides of the drain-source. The drain and source configurations are symmetrical, allowing for important flexibility in design. The P-channel package allows for improved power efficiency for low side switching applications. The drain terminal of the AON7202_101 is available in three different package types, including N-Channel, SOIC, and TSSOP.

The working principle of the AON7202_101 is based on the concept of a field effect transistor. A field effect transistor works by modulating the current flow through a semiconductor material by applying a small voltage difference between the gate and source terminals. The current flow between the drain and source terminals depends on the gate voltage. When a voltage is applied to the gate of a FET, it creates an electrical field in the semiconductor material which then modulates the current flow through the drain-source terminals. AON7202_101 FETs employ a modified version of this principle, where a voltage is applied to both the gate and the source terminals, resulting in a much lower power usage and improved power efficiency.

The AON7202_101 has a low RDS(on) rating, which makes it a good choice for low side switching applications, such as automotive applications. Compared to traditional MOSFETs, the AON7202_101 also offers improved power efficiency, allowing for higher speed switching, lower noise, and shorter turn-on/turn-off times. In addition, the FET can operate at temperatures up to 175°C, which is ideal for automotive applications that require high temperature operation.

The AON7202_101 is also a good choice for applications that require higher voltage switching, such as relay and motor control applications, as well as applications that require high-performance power transistors. Due to its low RDS(on) rating and symmetrical drain/source configuration, the AON7202_101 is able to offer excellent performance and power efficiency in any low side switching application. The drain terminal is available in three different package types, offering increased design flexibility.

The AON7202_101 is a highly efficient and reliable FET that is suitable for a variety of low side switching and power control applications. It offers excellent power efficiency, low RDS(on) rating, and symmetrical drain/source configuration. Due to its improved performance and flexibility, the AON7202_101 is a good choice for automotive and industrial applications that require reliable and efficient low side switching.

The specific data is subject to PDF, and the above content is for reference