| Allicdata Part #: | 800-3749-2-ND |
| Manufacturer Part#: |
AON7262E |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Alpha & Omega Semiconductor Inc. |
| Short Description: | MOSFET N-CH 60V 34A 8DFN |
| More Detail: | N-Channel 60V 21A (Ta), 34A (Tc) 5W (Ta), 43W (Tc)... |
| DataSheet: |  AON7262E Datasheet/PDF |
| Quantity: | 5000 |
Specifications
| Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
| Package / Case: | 8-PowerVDFN |
| Supplier Device Package: | 8-DFN-EP (3x3) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 5W (Ta), 43W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1650pF @ 30V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 45nC @ 10V |
| Series: | AlphaSGT™ |
| Rds On (Max) @ Id, Vgs: | 6.2 mOhm @ 20A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 21A (Ta), 34A (Tc) |
| Drain to Source Voltage (Vdss): | 60V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
Description
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AON7262E is a high-voltage, low-resistance N-channel enhancement mode MOSFET device that has been specifically designed for applications requiring extremely high performance. It is suitable for a wide range of applications, such as switching supplies, dc/dc converters, battery protection, and surge protection. This product features a minimum on-resistance of 84 milliohms, a minimum breakdown voltage of 40 volts, a maximum drain-source voltage of 100 volts, and a maximum drain current of 150 milliamps.The AON7262E is a single channel N-channel MOSFET (Field Effect Transistor) that uses an N-type gate to control electrical current. It is composed of a substrate, a source, a drain, and a gate, which are constructed of an organic silicon material. In order to turn on the MOSFET, the gate must be forward biased (positively charged) in comparison to the source and drain. Similarly, to turn off the MOSFET, the gate must be reverse biased (negatively charged). When the MOSFET is in the off state, the gate is reverse biased, which prevents the flow of current from the source to the drain. This prevents the load connected to the drain from being powered. When the gate is forward biased, the current is allowed to flow from the source towards the drain and the load is powered. AON7262E can be used in a variety of applications, including but not limited to, switching supplies, dc/dc converters, battery protection, and surge protection circuits. In switching supplies, AON7262E can be used as a switch to turn the supply on and off depending upon the input voltage. In dc/dc converters, it can be used to regulate the voltage output by controlling the amount of current flowing through the circuit. In battery protection, AON7262E can be used to prevent a battery from being overcharged or undercharged by monitoring the voltage level and controlling the current. Finally, in surge protection circuits, AON7262E can be used to protect against sudden voltage spikes. The main advantage of AON7262E is its low on-resistance, which allows for improved current flow and higher switching speeds than other MOSFETs. In addition, its wide operating temperature range of -40°C to +150°C allows it to be used in a variety of conditions and temperatures. Finally, its N-channel construction and integrated gate-source diode allows for improved immunity to ESD (electro-static discharge) pulses.In conclusion, AON7262E is a high-performance N-channel MOSFET that can be used in a variety of applications, including switching supplies, dc/dc converters, battery protection, and surge protection circuits. Its low on-resistance, wide operating temperature range, and integrated gate-source diode allows it to provide superior performance compared to other MOSFETs.
The specific data is subject to PDF, and the above content is for reference
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