| Allicdata Part #: | AON7409-ND |
| Manufacturer Part#: |
AON7409 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Alpha & Omega Semiconductor Inc. |
| Short Description: | MOSFET P-CH 30V 16A 8DFN |
| More Detail: | P-Channel 30V 16A (Ta), 32A (Tc) 3.1W (Ta), 96W (T... |
| DataSheet: | AON7409 Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 2.7V @ 250µA |
| Package / Case: | 8-PowerSMD, Flat Leads |
| Supplier Device Package: | 8-DFN (3x3) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 3.1W (Ta), 96W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2142pF @ 15V |
| Vgs (Max): | ±25V |
| Gate Charge (Qg) (Max) @ Vgs: | 58nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 8.5 mOhm @ 16A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 16A (Ta), 32A (Tc) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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AON7409 Application Field and Working Principle
The AON7409 is an advanced small-signal N-channel MOSFET. It provides a high performance power switch solution featuring ESD protection and ultra low on resistance in a small footprint. As a result, this MOSFET is well-suited for small power applications requiring low voltage, low RDS(ON) and low noise switching from small battery or USB power sources.
Application Fields
This MOSFET can be used in a variety of applications, including DC/DC converters, batteries, and smart phones. Other applications for the AON7409 include power management for high-speed data transfer in mobile devices, portable audio amplifiers and digital-to-analog converters. It can also be used in logic level shifters, logic gates, and small-signal switching applications.
Working Principle
The AON7409 uses an N-channel MOSFET as the switch. When a voltage is applied to the gate terminal, the gate-source threshold voltage is exceeded, and electrons begin to flow across the channel between the source and the drain. The placed electric field is generated between the gate and the drain terminals, which contributes to the device’s high-speed characteristics. Additionally, the high-speed switching characteristics of the N-channel MOSFET allow for a wide operating frequency of up to 1 MHz.
The AON7409 provides superior on-resistance, low noise, and low power consumption by utilizing its series terminal configuration, which improves the distribution of current throughout the source and the drain. This allows the AON7409 to maintain a low on-resistance even at high current densities. In addition, the MOSFET is protected by a built-in ESD protection circuit. This allows it to withstand electrostatic discharges of up to 1000 volts.
Conclusion
The AON7409 is an advanced small-signal N-channel MOSFET. Its high performance power switch solution provides superior on-resistance, low noise, and low power consumption, making it ideal for a variety of applications such as DC/DC converters, batteries, smart phones, and mobile devices. Additionally, it features a built-in ESD protection circuit that allows it to withstand electrostatic discharges of up to 1000 volts.
The specific data is subject to PDF, and the above content is for reference
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AON7409 Datasheet/PDF