AON7532E

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AON7532E characteristics as a single-channel enhancement and enhancement/depletion logic level N-channel MOSFET and is designed to meet the needs of low power consumption for battery-powered wireless devices. Additionally, AON7532E is suitable for battery-powered wireless devices with need for low on-resistance and fast switching time requirement such as consumer electronics, power management control and embedded system applications.

AON7532E has excellent on-resistance characteristics due to its small die size. With a maximum on-resistance of 1.8 Ohm at a gate drive of 1.65 V and a total gate charge of 0.56 nC, AON7532E is an ideal choice for applications requiring low power consumption and fast switching. It also features a fast switching time with an answer time of 9.3 ns on swtiched from on to off state.

Basic working principle of AON7532E MOSFET is based on standard enhancement- mode MOSFET. Its gate threshold voltage determines 2 operating states (ultra-low threshold or Standard threshold) with different application focus. When the voltage applied to its gate exceeds the gate threshold voltage, the N-channel between the source and drain becomes active. This causes the drain current to flow from source to the drain. The current flows until the voltage applied to the gate falls below the threshold voltage and turns off the N-channel.

In addition to switching applications, AON7532E can also be used in many high-precision current sensing and high-frequency applications because of its low on-resistance and fast switching. It is compatible with both automated and manual assembly processes, enabling it to be used in a wide range of applications. Furthermore, it features a wide range of package options for integration into small form factor designs.

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