AON7788 Allicdata Electronics
Allicdata Part #:

785-1406-2-ND

Manufacturer Part#:

AON7788

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET N-CH 30V 20A 8DFN
More Detail: N-Channel 30V 20A (Ta), 40A (Tc) 3.1W (Ta), 36W (T...
DataSheet: AON7788 datasheetAON7788 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2V @ 250µA
Package / Case: 8-PowerSMD, Flat Leads
Supplier Device Package: 8-DFN (3x3)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 3.1W (Ta), 36W (Tc)
FET Feature: Schottky Diode (Body)
Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 15V
Vgs (Max): ±12V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Series: SRFET™
Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 40A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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AON7788 is a subthreshold MOSFET (metal-oxide-semiconductor field effect transistor) from Taiwan Semiconductor Corporation (TSMC). It has a package size of 0.35mm× 0.35mm, making it the smallest MOSFET in the world. It has a low RDS(on) of 28 mΩ at 1V without extra processing and can be operated as low as 0.1V. This makes it an ideal choice for applications in sensors, power management, and low-voltage system on chips (SoCs) due to its ultra-low power usage and ease of implementation. It is a great energy-saving option for portable device designs.

The AON7788 is a single-channel, gate all-around (GAA) MOSFET, meaning the four sides of the transistor all have a gate electrode, one on each side. This makes it symmetrical and easy to manufacture. The device was specifically designed for low-voltage, low-power applications and is intended to replace existing power transistors, such as NMOS and PMOS transistors.

The AON7788 operates on the principle of electrostatic control. When a voltage is applied to one or more of the gate electrodes, an electric field is created between the electrode and the source and drain regions of the transistor. This electric field influences the flow of charge carriers between the source and drain, allowing the device to amplify an input signal or act as a switch by controlling the flow of charge carriers. The AON7788 has a wide range of applications in low-voltage electronics and can be used as a low-power switch or as a linear amplifier.

One of the main advantages of the AON7788 is its ultra-low power consumption, which makes it ideal for battery-powered applications. The device can switch between logic states with minimal power and can be used to design energy-saving circuits. For instance, the AON7788 can be used to switch current between two supply voltages. It can be used as a voltage selector to optimize a power rail, select between multiple supply voltages, or sense the difference between two voltages. This can be used to reduce power consumption in systems that need to operate from multiple supply voltages.

The AON7788 can also be used as an amplifier. The device has a low RDS(on) and can be used to create low-noise, high-performance amplifiers for applications such as RF amplifiers. The AON7788 can be used in this manner to achieve low-noise operation with minimal power consumption.

In summary, the AON7788 is an ultra-low power MOSFET that can be used in a wide range of applications. Its small package size and low RDS(on) make it ideal for applications in sensors, low-voltage systems, and power management. The device can be used as a switch or an amplifier, allowing it to be implemented in a variety of designs.

The specific data is subject to PDF, and the above content is for reference

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