AOT10B65M2 Allicdata Electronics

AOT10B65M2 Discrete Semiconductor Products

Allicdata Part #:

785-1762-ND

Manufacturer Part#:

AOT10B65M2

Price: $ 1.25
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: IGBT 650V 10A TO220
More Detail: IGBT 650V 20A 150W Through Hole TO-220
DataSheet: AOT10B65M2 datasheetAOT10B65M2 Datasheet/PDF
Quantity: 990
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: $ 1.14030
10 +: $ 1.03194
25 +: $ 0.92106
100 +: $ 0.82902
250 +: $ 0.73693
500 +: $ 0.64479
Stock 990Can Ship Immediately
$ 1.25
Specifications
Power - Max: 150W
Supplier Device Package: TO-220
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Reverse Recovery Time (trr): 262ns
Test Condition: 400V, 10A, 30 Ohm, 15V
Td (on/off) @ 25°C: 12ns/91ns
Gate Charge: 24nC
Input Type: Standard
Switching Energy: 180µJ (on), 130µJ (off)
Series: Alpha IGBT™
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A
Current - Collector Pulsed (Icm): 30A
Current - Collector (Ic) (Max): 20A
Voltage - Collector Emitter Breakdown (Max): 650V
IGBT Type: --
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The AOT10B65M2 is one type of N-channel insulated-gate bipolar transistor (IGBT) module that has single switch configuration for high voltage and high current power control. It has been widely used in industrial automation, renewable energy, automobile, and other power applications. It operates with low gate drive power and has a wide, symmetrical SOA (safe operating area) that increases its robustness and reliability. Thanks to its low gate drive power and wide SOA characteristics, the AOT10B65M2 can operate reliably under a wide range of current and voltage conditions and, as such, is capable of handling power up to 10 kV/65 A.

The AOT10B65M2’s working principle starts with the control current applied to the gate. When the gate voltage turns on, the resistance between the emitter and the collector gets reduced, which in turn allows current to flow through the circuit. The transistor remains in the ON state as long as the gate voltage is applied. In other words, it acts like a switch for controlling power. When the gate voltage is removed, the transistor switches off and the circuit gets disconnected. This makes the AOT10B65M2 an ideal choice for applications where very high currents and voltages are needed.

One of the key advantages of the AOT10B65M2 is its ability to operate at very high frequencies. This technology enables faster switching, more efficient current flow and improved reliability. It also allows for more design flexibility and higher power outputs, which makes it suitable for a variety of high-power applications. The wide SOA characteristics of this device also makes it more robust and reliable, which is another reason why so many industries have been relying on it for their power applications.

Overall, the AOT10B65M2 is a reliable, high performance IGBT module that can be used for a wide range of high-power applications. Thanks to its low gate drive power, wide SOA, and high frequency operation capabilities, the AOT10B65M2 is capable of handling power up to 10 kV/65 A. Its robust design and wide SOA characteristics make it a reliable choice for various industrial, renewable energy, and automobile applications.

The specific data is subject to PDF, and the above content is for reference

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