Allicdata Part #: | 785-1511-5-ND |
Manufacturer Part#: |
AOT15S65L |
Price: | $ 2.30 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 650V 15A TO220 |
More Detail: | N-Channel 650V 15A (Tc) 208W (Tc) Through Hole TO-... |
DataSheet: | AOT15S65L Datasheet/PDF |
Quantity: | 328 |
1 +: | $ 2.09160 |
10 +: | $ 1.88811 |
100 +: | $ 1.51698 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 208W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 841pF @ 100V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 17.2nC @ 10V |
Series: | aMOS™ |
Rds On (Max) @ Id, Vgs: | 290 mOhm @ 7.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 15A (Tc) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Not For New Designs |
Packaging: | Tube |
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AOT15S65L is a type of single power MOSFET (Metal Oxide Semiconductor Field-Effect Transistor). It belongs to Toshiba\'s SLiP series and is designed to provide high power efficiency, low capacitance, and high operating temperatures in medium to high voltage applications.
Application Field
AOT15S65L is suitable for use in a variety of applications including power management in servers, mobile equipment, tablet PCs, and automotive appliances. It is also used in adjustable speed drive systems, voltage regulators, switching mode power supplies (SMPS), and pulse-width modulated (PWM) motor controls. The device is suitable for use with DC-DC converters, power switches, and load switches. It has a wide drain voltage range (VDS) of 10V to 30V.
The AOT15S65L is especially suitable for use in high-precision current control applications due to its low RDS(on) and reduced body diode resistance. This allows for higher efficiency, lower EMI, and improved temperatures. Additionally, the device features built-in overcurrent, overheating, and overvoltage protection.
Working Principle
The AOT15S65L is a single N-channel power MOSFET. It is constructed with a single, insulated gate oxide layer, a single drain extension, and multiple source extensions. The insulated gate oxide layer is made up of a positively charged semiconductor material. This creates an electric field when a voltage is applied to the gate, which affects the chip\'s drain current.
The AOT15S65L has a breakdown voltage of up to 30V, which is determined by the gate voltage. At gate voltages below 30V, the gate does not draw any current, resulting in a constant drain current. However, as the gate voltage rises, the drain current increases exponentially until it reaches the device\'s maximum current rating.
The AOT15S65L also features built-in protection against overcurrent, overheating, and overvoltage. This is accomplished by monitoring the source voltage, drain voltage, and temperature around the device. If any of these parameters go outside of their specified limits, the device shuts down. This prevents damage to the device and also increases the overall lifetime of the device.
The AOT15S65L is an ideal solution for medium to high voltage applications that require high power efficiency and low capacitance. Its low RDS(on) resistance, robust protection, wide drain voltage range, and high operating temperature make it an excellent choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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