| Allicdata Part #: | 785-1429-5-ND |
| Manufacturer Part#: |
AOT11N60L |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Alpha & Omega Semiconductor Inc. |
| Short Description: | MOSFET N-CH 600V 11A TO220 |
| More Detail: | N-Channel 600V 11A (Tc) 272W (Tc) Through Hole TO-... |
| DataSheet: |  AOT11N60L Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 272W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1990pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 37nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 650 mOhm @ 5.5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 11A (Tc) |
| Drain to Source Voltage (Vdss): | 600V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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AOT11N60L is a type of Power MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor), which is used for higher power applications. It has a low on-state resistance, high switching speed and low gate charge. It also has a higher breakdown voltage and is suitable for circuit protection and automotive applications.
The working principle of AOT11N60L is based on the field effect principle. Field effect transistors (FET) operates on an electrical field which controls the current in the transistor. The AOT11N60L has a gate, drain and source which correspond to the control, output and input sides of the device. The gate is biased at a certain voltage and this creates an electrical field which controls the flow of current from the drain to the source. The amount of current which can flow through the FET is determined by the voltage across the gate.
AOT11N60L can be used for various applications such as power circuits, computer power supplies, amplifiers, switching regulators and motor drivers. It can also be used for low voltage DC-DC converters, LED drivers and power management. In addition, it can be used for a variety of automotive applications such as motor control systems and automotive body electronics.
The AOT11N60L is also suitable for high speed switching applications due to its fast switching capabilities. Since it has a low on-state resistance and high switching speed, it is the ideal choice for various applications requiring high efficiency, low power dissipation and high switching speed. Furthermore, the higher breakdown voltage of AOT11N60L is ideal for use in circuits requiring protection from high voltages.
In conclusion, AOT11N60L is a type of Power MOSFET which is suitable for higher power applications. It has a low on-state resistance, high switching speed and low gate charge. It is also ideal for use in high speed switching applications. Furthermore, its higher breakdown voltage is suitable for circuit protection and automotive applications. Finally, AOT11N60L is the perfect choice for a variety of applications requiring high efficiency, low power dissipation and high switching speed.
The specific data is subject to PDF, and the above content is for reference
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