AOT1608L

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AOT1608L is an advanced high-voltage, low-on-resistance N-Channel enhancement mode MOSFET. This product is designed for power supply, DC-DC converters, battery chargers, portable computers and consumer products. The key features of the AOT1608L are low gate charge, low gate to drain leakage, low device capacitance and excellent high-temperature performance.

The main application fields of AOT1608L include power management, battery chargers, and consumer products. As a power management option, AOT1608L is used in PDAs and cell phones, power adapter design, and DC-DC converters. In battery charge applications, AOT1608L is used in line-powered applications, and UPS systems. Also, power supplies and consumer products are other main applications of AOT1608L.

AOT1608L works based on the metal-oxide-semiconductor field-effect transistor (MOSFET) technology and operates at a wide voltage range from 6V to 350V. AOT1608L is an N-Channel enhancement mode MOSFET and therefore it only allows one-way current flow when turned on and requires a small control current. The operation is based on the concept of charge carriers (electrons and holes) and their behavior in a semiconductor material.

MOSFET devices are rated by their threshold voltage, which is the voltage required for the device to start conducting. AOT1608L is rated for 16V threshold and achieves extremely low on-state resistance of 6.73mOhm (@3.3V and 10A) allowing higher source and drain currents with lower voltage drop and less heat dissipation.

When a positive voltage is applied to the gate of an AOT1608L device, a gate charge is created which equilibrates with the voltage on the gate. This gate charge is proportional to the voltage on the gate, the larger the voltage on the gate the more charge that is held on the gate and the greater the resulting electric field between the gate and source. This electric field creates a channel between the source and drain of the device, which allows current to flow.

The maximum Drain-Source voltage that can be applied to AOT1608L depends on the channel length of the MOSFET. The Gate-Source voltage of the device should not exceed the Absolute Maximum Ratings Parameters (VGS). Any voltage beyond the VGS rating might cause irreversible damages to the device.

AOT1608L has an extremely low drain to source leakage current, which helps to reduce power dissipation. The RDS (on) of AOT1608L is also very low, helping to minimize power dissipation.

The device also has a low device capacitance, which helps to minimize noise. This device also has excellent high-temperature performance.

In summary, AOT1608L is an advanced high-voltage, low-on-resistance N-Channel enhancement mode MOSFET. Its main application fields include power management, battery chargers, and consumer products. The device operates based on the metal-oxide-semiconductor field-effect transistor (MOSFET) technology and achieves low on-state resistance, low gate charge, low gate to drain leakage, low device capacitance and excellent high-temperature performance.

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