Allicdata Part #: | 785-1408-5-ND |
Manufacturer Part#: |
AOT1100L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 100V 8A TO220 |
More Detail: | N-Channel 100V 8A (Ta), 130A (Tc) 2.1W (Ta), 500W ... |
DataSheet: | AOT1100L Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 3.8V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 2.1W (Ta), 500W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4833pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 100nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 12 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 8A (Ta), 130A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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AOT1100L is an advanced N-Channel metal oxide semiconductor field-effect transistor (MOSFET), employed in applications like DC-DC conversion, power amplifier, and high-speed switching. This device can be turned on and off from low-voltage signals, and at high speed, due to its low gate input capacitance and resistance.
In MOSFET devices, electric signals or power is used to control electric fields present between the source and drain, which are separated by a thin film of insulating material called the gate oxide. The gate voltage controls the electric field present in the channel, which in turn affects current flow from the source to the drain. In the AOT1100L MOSFET, the gate electrode is internally connected to a metal gate layer which is separated from the drain and source by the gate oxide.
Under forward bias, the gate-source junction presents a low resistance path for electrons to flow between the gate and the source. This lowers the voltage drop between them and causes the electric field in the channel to increase, allowing more current to flow from the source to the drain. On the other hand, under reverse bias, the electric field in the channel is reduced and current flow is blocked, turning off the device.
The AOT1100L is ideal for high-current switching applications, due to its low gate input capacitance and gate-source resistance. Its low on-state drain-source resistance (RDS(on)) allows for minimal heat generation and less power dissipation. This device is also suitable for high-frequency power conversion circuits, as its reverse transfer capacitance (Ciss) is significantly lower than other types of MOSFET devices.
The AOT1100L is widely used in DC-DC conversion and high-voltage/high-current switching applications. It is employed in voltage regulators, such as buck and boost, as well as in motor control circuits. It is also suitable for applications in the automotive, industrial, and consumer electronics markets.
The AOT1100L MOSFET is an easy-to-use, high-performance device, allowing efficient operation in many applications. Its low electric field and gate noise interference make it suitable for use in a wide range of applications, from DC-DC conversion to motor control circuits. With its low resistance and capacitance, the AOT1100L can be employed for high-speed switching and voltage regulation circuits, providing a reliable and efficient solution for power applications.
The specific data is subject to PDF, and the above content is for reference
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