Allicdata Part #: | AOT11C60L-ND |
Manufacturer Part#: |
AOT11C60L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 600V 11A TO220 |
More Detail: | N-Channel 600V 11A (Tc) 278W (Tc) Through Hole TO-... |
DataSheet: | AOT11C60L Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 278W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2000pF @ 100V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 42nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 400 mOhm @ 5.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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AOT11C60L belongs to a family of metal-oxide-semiconductor field-effect transistors (MOSFETs) that are developed by Advanced Optoelectronic Technology Inc (AOT). The AOT11C60L is a N-Channel MOSFET with a rated current of 11Amps and a maximum drain-source voltage of 60V.
The AOT11C60L MOSFET is widely used in a variety of applications such as power switching and in power regulation, voltage regulation, DC/DC converters and high side switching. It is commonly used for controlling the supply and gate voltage of a power supply or to regulate the current draw in a circuit. It is also used in communications systems, such as RF switches, base station power amplifiers and modems, as well as many industrial control and automation systems.
The AOT11C60L MOSFET is based on a self-aligned silicon gate technology, which reduces the amount of doping used in the fabrication process. As such, the device has better reliability and higher frequency performance than standard n-channel MOSFETs. The device also features a low on-resistance, low internal capacitances and improved switching performance.
The MOSFET works by using the electrostatic energy moving between its gate electrode and its source electrode to create an electric field. When the voltage at the drain is higher than the voltage at the source, the electric field will open up a conductive channel between the source and the drain. This allows current to flow from source to drain and the device will act as a switch. When the voltage at the source is higher than the voltage of the drain, the conductive channel will close and the current will not pass through the device.
In addition to its main use in power applications, the AOT11C60L MOSFET can also be used in a range of other applications. It can be used as an input device for analog circuits, as well as an output device for logic circuits. It is also used in analog applications such as DC/DC converters, voltage regulators and power supplies.
The AOT11C60L MOSFET is a highly reliable and versatile device that offers excellent performance and cost-efficiency. It is a great choice for applications where high performance, durability and cost-efficiency are required.
The specific data is subject to PDF, and the above content is for reference
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