Allicdata Part #: | AOT12N65_001-ND |
Manufacturer Part#: |
AOT12N65_001 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 30V TO220 |
More Detail: | N-Channel 650V 12A (Tc) 278W (Tc) Through Hole TO-... |
DataSheet: | AOT12N65_001 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Gate Charge (Qg) (Max) @ Vgs: | 48nC @ 10V |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 278W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2150pF @ 25V |
Vgs (Max): | ±30V |
Series: | -- |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Rds On (Max) @ Id, Vgs: | 720 mOhm @ 6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Tc) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
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AOT12N65_001 is an advanced-technology, 12V N-Channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) featuring ALD technology. This type of transistor is capable of switching loads up to 85A with a substantially low RDS (on) resistance of 0.0022 ohms. This transistor is specially developed and characterized for high blocking voltage, high current control and low power consumption. It is majorly used in high current and power applications, where the absence of a continuous current path distinguishes it from the bipolar transistors. Despite its wide usage in various applications, this transistor cannot support bipolar operation because of its structure.
AOT12N65_001 Application Field
AOT12N65_001 transistor can be widely used in switch mode power supplies, home appliances, motor drives, computer peripheral, game machine, lighting management, mobile phone, high performance services, transducer & current control, automotive electronics, and voltage regulation system. It is mainly used for the design of power switching circuits that demand low RDS (on) specs, high efficiency and high-current handling capabilities. It also has high-capacitance and insulation characteristics. It can also be used in applications where inductive loads have to be switched on and off repeatedly at high currents such as power compressors in HVAC systems.
AOT12N65_001 Working Principle
The N-channel MOSFET, in general, comprises of an insulated gate, a source and a drain terminal, as well as a substrate or ‘body’ connection. When a voltage is applied to the gate terminal, it modulates the flow of electrons from the source to the drain terminal by controlling the resistance of the channel that is produced. When the voltage applied to the gate is greater than the threshold level of the MOSFET, the resistance of N-Channel is significantly reduced and a high current path is established between the drain and the source.
High power N-channel MOSFETs are majorly used in applications that require high currents. The AOT12N65_001 is configured as a PChannel MOSFET, because in this configuration the drain terminal can conduct current in both directions, allowing for higher currents with internal diodes built-in to protect against reverse polarity. This transistor can be used to control the flow of higher currents by switching the voltage applied to the gate, allowing it to switch heavy loads efficiently.
Due to the high voltage and current capabilities of the AOT12N65_001, it is commonly used in power management and high-current applications. When paired with pulse-width modulation (PWM) circuitry, this transistor can help to regulate the voltage and current efficiently while protecting the power device from damage caused by higher voltages. This makes the AOT12N65_001 an ideal choice for applications requiring high power and current efficiency.
The specific data is subject to PDF, and the above content is for reference
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