AOT10T60L

Vgs(th) (Max) @ Id:	5V @ 250µA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	208W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1346pF @ 100V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	35nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	700 mOhm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	10A (Tc)
Drain to Source Voltage (Vdss):	600V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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AOT10T60L Application Field and Working Principle

Introduction

AOT10T60L is a high-performance, high-voltage, low-power, ultra-low-on-resistance, field-effect transistor (FET) that has a wide application field across many industries. The transistor, which is made by a Taiwan semiconductor manufacturer, Alpha & Omega Semiconductor, Inc., is a single FET and is suitable for a wide range of high-power applications. It has a current capacity of 10A and voltage ratings of up to 100V, and its ultra-low on-resistance allows it to be used in applications requiring high efficiency.

Application Field

AOT10T60L is ideally suited for use in power management and power switching circuits, including Voltage Regulator Modules (VRM) used in computing applications. The device’s low-on-resistance and high-current capacity make it ideal for use in applications in which its use will reduce overall heat generation. This has made it valuable for use in a variety of consumer electronics and industrial products, such as communication systems, computing systems, household appliances, automotive electronics, and industrial motor control systems.Additionally, the device’s low-on-resistance and ultra-low gate-to-drain resistance have been key to its ability to be used in high-efficiency power inverters and DC-DC converters. This makes it invaluable in many solar and renewable energy technologies, such as photovoltaic power systems, e-bikes, and smart grid technologies.

Working Principle

AOT10T60L is a single, field-effect transistor with an ultra-low on-resistance and high-current capacity. These transistors are operated using the principle of majority carriers, which is the movement of electric charge from one side of the transistor to the other. As voltage is applied to the gate, a majority carrier will be created and move from the source to the drain, providing the current that is needed to perform the desired task. The current in a FET is controlled by the electric voltage applied to the gate. If a low voltage is applied, the electric field created will be weaker, thus allowing fewer majority carriers to move. Conversely, if a higher voltage is applied, a greater number of majority carriers will be created, and thus the current will be higher. Additionally, the type of material used to create the transistor, as well as its thickness, will also affect the current.

Conclusion

AOT10T60L is a high-performance, high-voltage, low-power, ultra-low-on-resistance field-effect transistor that is ideally suited for use in power management and power switching circuits, voltage regulator modules, and in some solar and renewable energy technologies. This device is operated using the principle of majority carriers and is controlled by the electric voltage applied to the gate. The type and thickness of the material used in its construction also affects its overall current capacity.

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