Allicdata Part #: | AOT10N60_001-ND |
Manufacturer Part#: |
AOT10N60_001 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 600V 10A TO-220 |
More Detail: | N-Channel 600V 10A (Tc) 250W (Tc) Through Hole TO-... |
DataSheet: | AOT10N60_001 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 250W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1600pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 40nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 750 mOhm @ 5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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AOT10N60_001 Application Field and Working Principle
AOT10N60_001 is a high power and efficient semiconductor device developed by Alpha & Omega Semiconductor. It is categorized under transistors, specifically Field Effect Transistors (FETs) and Metal-Oxide Semiconductor Field Effect Transistors (MOSFETs). It is a single device, and its primary function is to regulate the current through an electrical circuit.
What is a FET?
A FET is a type of transistor that uses a voltage or electric field to control its current-carrying characteristics. It is also known as a voltage-controlled device. FETs have three nodes. The source and drain are the inputs, and the gate is the control. By using a positive or negative voltage at the gate, the electrical characteristics of the transistor can be regulated.
What is a MOSFET?
A MOSFET is a type of FET that is fabricated using metal-oxide semiconductor technology. This technology provides a greater level of control over the electrical characteristics of the FET. MOSFETs have three nodes as well. The source and drain are the inputs, while the gate is the control. By applying a positive or negative voltage to the gate, the transconductance of the MOSFET can be regulated.
Features of AOT10N60_001
The AOT10N60_001 device is designed to be used in high power and efficient semiconductor circuits. It is a 60V N-channel MOSFET with a maximum drain current of 6A. It offers excellent switch-on behavior, very low on-state resistance, and low gate threshold voltage. It also has a very low reverse transfer capacitance for fast switching and a low gate charge for improved system efficiency. Additionally, it has a wide operating temperature range and a high maximum junction temperature for improved reliability.
Working Principle
The functioning of the AOT10N60_001 is based on the principles of a MOSFET. It operates by applying a voltage or an electrical field to the gate terminal. When a voltage is applied, it creates a potential across the MOSFET and controls the current-carrying characteristics of the source and drain. When the voltage is removed, the MOSFET turns off and the current is blocked.
The AOT10N60_001 device can be used in a variety of applications. It is suitable for high-power, high-efficiency circuits including DC-DC converters, power management systems, and motor drivers. It can also be used in applications such as automotive, industrial, lighting, and communication systems.
Conclusion
The AOT10N60_001 is a high power and efficient semiconductor device developed by Alpha & Omega Semiconductor. It is categorized under transistors, specifically FETs and MOSFETs. It is a single device, and its primary function is to regulate the current through an electrical circuit by applying a voltage or an electric field to the gate. It is suitable for high-power, high-efficiency circuits, and can be used in applications such as automotive, industrial, lighting, and communication systems.
The specific data is subject to PDF, and the above content is for reference
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AOT12N60 | Alpha & ... | -- | 1000 | MOSFET N-CH 600V 12A TO-2... |
AOT10N60_001 | Alpha & ... | 0.0 $ | 1000 | MOSFET N-CH 600V 10A TO-2... |
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AOT11S65L | Alpha & ... | -- | 1000 | MOSFET N-CH 650V 11A TO22... |
AOT10N65 | Alpha & ... | -- | 1000 | MOSFET N-CH 650V 10A TO22... |
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