Allicdata Part #: | 785-1694-5-ND |
Manufacturer Part#: |
AOT10T60PL |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 600V 10A TO-220 |
More Detail: | N-Channel 600V 10A (Tc) 208W (Tc) Through Hole TO-... |
DataSheet: | AOT10T60PL Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 208W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1595pF @ 100V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 40nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 700 mOhm @ 5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 10A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The AOT10T60PL is a highcurrent, ultra-low-voltage, power MOSFET. This type of MOSFET is an ideal choice for a range of applications, thanks to its impressive combination of features. For example, the device offers low-voltage operation down to 1 Volt and low-threshold voltage. Furthermore, the AOT10T60PL delivers superior performance at high currents and frequencies.
In terms of applications, the AOT10T60PL is powerful enough to handle demanding applications. It’s often used to switch high-voltage circuits and can be used in DC-DC converters, power-converters, and high-current amplifiers. The device is also suitable for use in a wide range of automotive applications. It’s even been used in applications such as controller area network (CAN) systems and other network connectivity applications.
In order to understand the working principle of the AOT10T60PL, it’s necessary to first understand the basics of MOSFETs. A MOSFET (metal-oxide-semiconductor field-effect transistor) is a three-terminal active device, typically used as a switch or amplifier. Its terminals are a source, gate, and drain, with the gate being the controlling terminal. The source and drain allow current to flow across it, while the gate is used to control the flow of current.
The AOT10T60PL works by using an internal gate insulation layer. The gate insulation layer prevents any direct current from passing from the gate to the source and drain. This means that when the gate voltage is higher than the drain voltage, the MOSFET is turned on and current is allowed to flow, and when the gate voltage is lower than the drain voltage, the MOSFET is turned off and no current is allowed to flow. This is known as the “Enhancement Mode” of operation. The core of the AOT10T60PL MOSFET is a high resistivity silicon layer sandwiched between two metal layers. This metal layer acts as a gate and controls current flow in response to applied voltages. To switch on the MOSFET, a positive voltage is applied to the gate. This increases the electric field and generates a conductive channel between source and drain. This allows current to flow across the device in the Enhanced Mode.
The AOT10T60PL MOSFET has several advantages over less advanced power MOSFETs. For example, it offers a high-drive capacity, low-resistive on-state and very low operating voltage. Additionally, because of its high current-driving capability, it can be used in a range of power circuits. It has the ability to drive more load than other Power MOSFETs, making it ideal for applications such as power converters. Furthermore, it’s able to operate with low-level input voltages, making it suitable for use in low-voltage power electronics.
In conclusion, the AOT10T60PL is a high-current, ultra-low-voltage, power MOSFET. Its features make it an ideal choice for a range of applications, especially in high voltage circuits and low-voltage DC-DC converters. The device works by using an internal gate insulation layer to switch on or off current flow. Additionally, its high-drive capacity, low resistive on-state, and low operating voltage make it a great choice for many power circuits.
The specific data is subject to PDF, and the above content is for reference
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