AOT13N50

Vgs(th) (Max) @ Id:	4.5V @ 250µA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	250W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1633pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	37nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	510 mOhm @ 6.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	13A (Tc)
Drain to Source Voltage (Vdss):	500V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

AOT13N50 Application Field and Working Principle

AOT13N50 is a type of field effect transistor (FET). It is a common three-terminal device used to control the flow of current in a circuit, with one terminal for the gate, one for the drain and one for the source. It is most commonly used in linear circuits and switching circuits where it provides switching and gain stages and can be used in a variety of applications including amplifiers, multiplexers and digital signal processing.The AOT13N50 is a monolithic type enhancement-mode field-effect transistor (FET) constructed using a silicon substrate and having three terminals: gate, drain and source. It is typically used to switch and amplify electrical signals in circuits. The main advantage of using the AOT13N50 is that it is very small in size compared to other transistors, and thus can be used in very limited areas, making it highly suitable for use in portable electronic devices.The basic working principle of the AOT13N50 is similar to that of a normal MOSFET, but differs in a few parameters. When a voltage is applied to the gate terminal of the AOT13N50, an electric field is created that affects the behavior of the electrons in the channel, and this electric field is used to control the current flowing through the device. When a positive voltage is applied to the gate, the device is said to be in the "on" state, and current can flow through the device. Conversely, when a negative voltage is applied to the gate, the device is said to be in the "off" state and the current will not flow. The switching and gain capabilities of the device depend on the voltage applied to the gate, the drain-source current, and the gate-source voltage.The AOT13N50 is suitable for use in a variety of applications, including power amplifiers, radio frequency (RF) amplifiers, switching circuits, and pulse generators. It also has a high input impedance (due to the channel\'s depletion layer) making it suitable for use in high impedance circuits such as high-impedance oscillators. Furthermore, since the device is built on a silicon substrate, it provides high-temperature operation, thus making it a good choice for use in harsh environments or applications where higher temperatures are expected.The AOT13N50 can be used as either an enhancement- or depletion-mode FET, depending on how it is wired. The enhancement-mode FET has a gate-source voltage of positive polarity, when the positive gate voltage is applied, the source region will become more conductive, while the drain region remains unaffected; this is ideal for use in linear or switching circuits as the device can be used to switch on or off signals. On the other hand, the depletion-mode FET has a gate-source voltage of negative polarity, when the negative gate voltage is applied, the drain region will become more conductive, while the source region remains unaffected; this is ideal for use in pulsed circuits.In conclusion, the AOT13N50 is a very useful transistor for use in a wide range of applications. It is small in size and highly reliable, and has the versatility to switch and amplify electric signals in circuits. Furthermore, its ability to operate at higher temperatures makes it suitable for use in harsh environments.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description