| Allicdata Part #: | AOT12N60FD-ND |
| Manufacturer Part#: |
AOT12N60FD |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Alpha & Omega Semiconductor Inc. |
| Short Description: | MOSFET N-CH 600V 12A TO220 |
| More Detail: | N-Channel 600V 12A (Tc) 278W (Tc) Through Hole TO-... |
| DataSheet: |  AOT12N60FD Datasheet/PDF |
| Quantity: | 1000 |
Specifications
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 278W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2010pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 50nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 650 mOhm @ 6A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 12A (Tc) |
| Drain to Source Voltage (Vdss): | 600V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
Description
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AOT12N60FD is a type of an advanced power MOSFET (metal oxide semiconductor field effect transistor), which is designed to handle high voltage and current. It offers superior performance over traditional bipolar junction transistors in many types of applications requiring high power densities, high speed switching, and low on-state resistance. To help understand the application field and working principle of AOT12N60FD, let\'s take a closer look at their design and features.The AOT12N60FD is a vertical double diffused MOSFET (VDMOS) device. It is designed to cancel out parasitic capacitances, which often cause performance issues in other MOSFET designs. This design feature gives the AOT12N60FD a significantly higher power densities and thermal performance than similar sized MOSFETs. This makes the AOT12N60FD an ideal choice for applications, such as power conversion and motor control, where small size and high power densities are crucial.Unlike traditional MOSFETs, the AOT12N60FD comes with integrated gate drivers. These gate drivers are designed to drive the AOT12N60FD’s gate quickly, allowing it to switch from on to off or from off to on quickly. This helps reduce switching losses and makes the AOT12N60FD particularly well suited for various types of power switching applications.The AOT12N60FD also features an integrated soft start function. This function helps to reduce in-rush current levels when the device is turned on, which further reduces switching losses. The integrated soft start circuit can also help reduce inductive kickback when the device is turned off.The AOT12N60FD has an impressive operating voltage range of 10 to 600V, and an on-state RDS(ON) of 0.70 ohms. This allows it to handle large currents while maintaining low on-state resistance. This makes the AOT12N60FD ideal for use in high power switching applications, such as motor control and power conversion.Due to its impressive performance characteristics, the AOT12N60FD is well suited for a wide variety of applications, including motor control, power conversion, lighting control, and industrial automation. Its integrated gate drivers, low on-state resistance, and integrated soft start circuit make it a great choice for these applications.In conclusion, the AOT12N60FD is an impressive device offering both high power densities and low on-state resistance. Its integrated gate drivers and soft start circuit make it a great choice for a variety of high power switching applications. It is a great choice for applications, such as motor control and power conversion.
The specific data is subject to PDF, and the above content is for reference
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