Allicdata Part #: | AOT11N70-ND |
Manufacturer Part#: |
AOT11N70 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 700V 11A TO220 |
More Detail: | N-Channel 700V 11A (Tc) 271W (Tc) Through Hole TO-... |
DataSheet: | AOT11N70 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 271W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2150pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 45nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 870 mOhm @ 5.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Tc) |
Drain to Source Voltage (Vdss): | 700V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The AOT11N70 is a single-gate NMOSFET (n-channel metal oxide semiconductor field-effect transistor). It is designed for use in a variety of applications, including DC-DC power supplies, motor drives, switch-mode power, amplifiers, and voltage regulating applications. This particular device is able to switch up to 11A, which makes it well-suited for many of these types of applications.
An NMOSFET works by using a voltage, rather than a current, to control the flow of electrons through a semiconductor. As the voltage is increased, more electrons are able to move through the device, and conversely, as the voltage is decreased, fewer electrons are able to move through the device. The AOT11N70 is an enhancement-type NMOSFET, meaning that it requires an additional voltage to allow electrons to move through the device.
The AOT11N70 operates with a drain-source voltage (VDS) of 40V, which means it must be connected to a power supply that can provide that voltage to ensure proper operation. The drain-source resistance (RDS) is 20mΩ, which makes it very efficient when it comes to transferring power from the power supply to the load.
The AOT11N70 also has a maximum gate-source voltage (VGS) of 12V, which is used to control the flow of electrons through the device. As the voltage is increased, more electrons are able to move through the device. The gate-source capacitance (CGS) is 60pF, which is important for applications that require quick transitions between on and off states.
The working principle of the AOT11N70 is based on the behavior of electrons in a semiconductor material when exposed to a voltage. When a voltage is applied to the gate of the transistor, it creates an electric field that affects the flow of electrons through the channel. When the gate voltage is increased, the electric field increases, allowing more electrons to move through the device. As the voltage is decreased, the electric field decreases, allowing fewer electrons to move through the device.
The AOT11N70 is a versatile device that can be used in a variety of applications. It is well-suited for DC-DC power supplies, motor drives, switch-mode power, amplifiers, and voltage regulating applications. Its high drain-source voltage and low RDS make it very efficient at transferring power from the power supply to the load, while its low gate-source capacitance allows for quick transition times between on and off states.
The specific data is subject to PDF, and the above content is for reference
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