Allicdata Part #: | 785-1710-5-ND |
Manufacturer Part#: |
AOT11C60PL |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH |
More Detail: | N-Channel 600V 11A (Tc) 298W (Tc) Through Hole TO-... |
DataSheet: | AOT11C60PL Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 298W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2333pF @ 100V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 50nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 420 mOhm @ 5.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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AOT11C60PL is an enhancement mode of power MOSFET developed by Alpha & Omega Semiconductor, Inc. It is a high-voltage, single-gateNMOS transistor with a typical breakdown voltage of 60 V.It is best suited for high-power and high-speed switching applications.
The AOT11C60PL exhibits excellent switching characteristics, including low on-state resistance (10 mohm) and fast switching speed (fall times of 15 ns). Additionally, the device is designed to be able to withstand large transient reverse voltages in addition to its high breakdown voltage.
The AOT11C60PL has several potential applications, ranging from switching regulators and motor controllers to AC-DC and DC-DC converters and HVPS systems. It could also be used as a switch in solar applications, such as photovoltaic inverters and power controllers, enabling efficient energy conversion and power management.
The AOT11C60PL operates using MOSFET principle. In a MOSFET, the source, drain and gate terminals are connected directly to the semiconductor material. A gate voltage is applied to the gate terminal which creates an electric field on the semiconductor material, allowing current to flow from source to drain when the gate voltage is positive. This flow of current is controlled by the applied gate voltage, and is called the “channel” in the MOSFET.
The MOSFET is an enhancement-mode transistor, meaning that the transistor is “OFF” at zero bias and requires an externally applied gate-to-source voltage to switch “ON” and allow drain current to flow. This allows it to be used as an electronic switch, capable of turning “ON” and “OFF” with very low gate currents. This makes the AOT11C60PL ideal for both low-current and high-power applications.
Due to its high breakdown voltage, fast switching speed and low on-state resistance, the AOT11C60PL is a great choice for high-voltage and high-power applications. It can be used as a switch in a variety of applications ranging from solar and motor controllers to HVPS systems. It is a highly efficient and reliable device with excellent switching characteristics, making it a great choice for many energy conversion and power management applications.
The specific data is subject to PDF, and the above content is for reference
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