AOTF10B65M2

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AOTF10B65M2 is a single IGBT developed by Alpha and Omega Semiconductor and is ideally suited for a wide range of applications. The device has an exceptionally low On-resistance when operating with gate voltages of 15V and below. The AOTF10B65M2 is available in both the TO-220F and TO-3P packages and features a built-in Freewheeling Diode (FWD) for high current and safe operation.

AOTF10B65M2 is a power transistor that is used for switching, amplification and signal processing in the electrical and electronics industries. This IGBT is particularly suitable for high-current and high-voltage applications. It can be used in audio amplifiers, power supplies, rectifier circuits, DC-DC converters, motor controllers and other power electronics devices.

The AOTF10B65M2 has a peak collector current of 10A and a collector-emitter voltage of 650V. It has a gate threshold voltage of ± 10V and a gate-source maximum voltage of ± 20V. The device features a built-in FWD which eliminates the need for external discrete diodes, thus saving on space, weight and cost. The device also has fast switching times making it suitable for high frequency applications.

The AOTF10B65M2 IGBT operates with a basic switch-on and switch-off operation. When the gate voltage, VGS, is below the threshold voltage, VTH, the device is in the off-state and no current flows through the Collector-Emitter junction. When the voltage applied to the Gate exceeds the threshold voltage, the device is switched on and a current starts to flow from the Collector-Emitter junction. Similarly, when the voltage applied to the Gate is reduced to below the threshold voltage, the device is switched off and the collector current ceases to flow.

The AOTF10B65M2 IGBT combines the power handling capabilities of a bipolar junction transistor with the low-loss switching characteristic of a MOSFET. This makes it ideal for high-current and high-voltage applications where efficiency, low off-state leakage and soft switching characteristics are required. Its wide operational voltage range and fast switching times makes it an ideal choice for power conversion applications.

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