AOTF4126 Allicdata Electronics
Allicdata Part #:

AOTF4126-ND

Manufacturer Part#:

AOTF4126

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET N-CH 100V 6A TO220F
More Detail: N-Channel 100V 6A (Ta), 27A (Tc) 2.1W (Ta), 42W (T...
DataSheet: AOTF4126 datasheetAOTF4126 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220-3F
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 2.1W (Ta), 42W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 50V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
Series: SDMOS™
Rds On (Max) @ Id, Vgs: 24 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 27A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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AOTF4126 is a single-gate MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) device, used for low-voltage, low-power analog and digital applications. It features high-accuracy, low-noise, fast switching performance, and a low On-resistance of only 0.08 ohm-cm2. It is capable of switching up to 10A of current in an operating environment from 3V to 35V.

AOTF4126 is configured as the source and the drain are connected to the gate. The channels are built into the silicon instead of being deposited on the substrate. By controlling the voltage applied to the gate, this transistor can be used to control the flow of current between the source and drain. When the gate voltage is zero, the channel is in its OFF state, where there is no conduction; when the gate voltage is increased, the conduction channel is "opened" and current flows between the source and drain.

AOTF4126 can be used in low-noise amplifiers, temperature regulators, and low-power analog applications.When designing circuits, it is important to make sure the gate voltage of the MOSFET is never higher than the drain voltage. Additionally, the gate-source capacitance should be kept to a minimum to avoid unnecessary current leakage. Depending on the application, a Schottky diode or zener diode may be used to clamp the gate voltage to prevent damage.

The AOTF4126 is also used in transceivers and receivers, where a signal needs to be amplified or filtered. Because it has a very low crosstalk and low power consumption, it is well-suited for use in high-frequency circuits. Additionally, it is resistant to both radiation and temperature, making it useful for a broad range of applications.

The AOTF4126 is used in a wide variety of applications due to its high-accuracy, low-cost, and reliable performance. Its low power consumption and efficient switching performance make it a popular choice for low-power applications. The device is also well-suited for use in medical applications and other applications requiring radiation-resistant and high-temperature-resistant components.

In summary, AOTF4126 is a single-gate MOSFET that is suitable for a variety of analog and digital applications. It is capable of switching up to 10A of current, and can be used in low-noise amplifiers and high-frequency circuits. Additionally, it is radiation- and temperature-resistant, making it well-suited for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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