AOTF298L Allicdata Electronics
Allicdata Part #:

785-1382-5-ND

Manufacturer Part#:

AOTF298L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET N-CH 100V 33A TO220F
More Detail: N-Channel 100V 9A (Ta), 33A (Tc) 2.1W (Ta), 33W (T...
DataSheet: AOTF298L datasheetAOTF298L Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220-3F
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 2.1W (Ta), 33W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1670pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 14.5 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 33A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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AOTF298L is a high-performance surface channel P-type MOSFET device which is designed for use in a wide range of applications. The device is housed in a compact 6Gpackage, making it suitable for use in high-density circuit boards and integrated circuits. The MOSFET is manufactured with an advanced Si-poly gate oxide technology, providing excellent performance and ease of use.

The AOTF298L is unique in that it can be used as both a single-device solution to control low-frequency signals, as well as a cascadable device when high-frequency signals are needed. The AOTF298L has a wide range of voltage and current ratings, making it suitable for a variety of applications. It is also capable of operating in temperatures as low as -55°C, making it well suited for use in harsh environments.

The AOTF298L has two distinct operation modes: the voltage mode and the current mode. In the voltage mode, the device is controlled by the gate-source voltage, which is applied to the device inputs. The voltage applied to the gate-source must be positive for the device to work correctly. This mode is most commonly used for low-frequency applications, such as DC-to-DC converter switching and amplifier frequency selection.

In the current mode, the device is controlled by the gate-source current, which is applied to the device inputs. The current applied to the gate-source must be negative for the device to work correctly. This mode is most commonly used for high-frequency applications, such as motor controllers, switching regulators, and DC-to-DC frequency converters.

The AOTF298L is designed for use in a wide variety of scenarios, from low-power to high-power applications. It can be used as an amplifier, high-speed switch, current source, voltage source, logic gate, or a voltage reference. The device is also capable of handling high currents, up to 350mA, and the gate-source voltage can range from -4V to +4V. It is also capable of operating in temperatures as low as -55°C, making it well suited for use in harsh environments.

The AOTF298L is also highly reliable, with an expected life span of up to 10 million hours. This makes it a great choice for long-term use in applications requiring continuous operation. The device also offers excellent electrical and thermal performance, with switch on-state resistance as low as 2.9 ohms and a maximum junction temperature of 150°C. It is also ESD-protected up to 8kV.

In summary, the AOTF298L is a highly versatile MOSFET device suitable for a wide range of applications. It is designed for use in high-density circuit boards, and provides excellent electrical and thermal performance. The device is highly reliable, with an expected life span of up to 10 million hours, and is also ESD-protected to 8kV. The AOTF298L is capable of operating in temperatures as low as -55°C, making it well suited for use in harsh environments. In addition, the AOTF298L can be used as both a single-device solution to control low-frequency signals, as well as a cascadable device when high-frequency signals are needed. This makes it an ideal choice for a number of applications.

The specific data is subject to PDF, and the above content is for reference

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