| Allicdata Part #: | AOTF10N90-ND |
| Manufacturer Part#: |
AOTF10N90 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Alpha & Omega Semiconductor Inc. |
| Short Description: | MOSFET N-CH 900V 10A TO220F |
| More Detail: | N-Channel 900V 10A (Tc) 50W (Tc) Through Hole TO-2... |
| DataSheet: | AOTF10N90 Datasheet/PDF |
| Quantity: | 1000 |
| Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
| Package / Case: | TO-220-3 Full Pack |
| Supplier Device Package: | TO-220-3F |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 50W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 3160pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 75nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 980 mOhm @ 5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 10A (Tc) |
| Drain to Source Voltage (Vdss): | 900V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
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AOTF10N90 is an avalanche-type insulated gate field-effect transistor (IGFET) based on a Silicon-on-Insulator (SOI) structure. It is a high-voltage, high-speed, high-performance device that can be used in a variety of applications including power management, motor control, HVAC systems, and renewable energy. In addition, the AOTF10N90 has been designed for extreme-environment applications and is capable of operating at temperatures up to 175°C (347°F).
The Avalanche-Type IGFET technology of the AOTF10N90 provides superior performance in high-voltage, high-speed applications. The device utilizes a special Silicon-on-Insulator (SOI) structure which prevents the buildup of charge on the dielectric and effectively boosts its tolerance of high voltages. The Structure of the AOTF10N90 also provides improved thermal performance, allowing the device to operate at higher temperatures. The device is also optimized with an optimized gate edge termination which reduces conduction losses and improves the switch-off time.
The main feature of the AOTF10N90 is its high-voltage operation capabilities. The device can handle up to 500V, making it ideal for use in high-voltage switch mode power supply applications or other power management systems. The device also has an integrated over-temperature protection, making it ideal for uses in extreme environments. The low on-resistance of the device makes it suitable for high-speed switching applications and the high breakdown voltage ensures reliable operation even under heavy load conditions.
The working principle of the AOTF10N90 is based on the avalanche effect. When a voltage of opposite polarity to the gate is applied, the gate-source PN junction breaks down, allowing for electrons and holes to avalanche in the region between the gate and source. This avalanche causes a sudden decrease in the gate-source voltage, which in turn causes the current flowing through the drain-source region to rapidly decrease, effectively turning the device off.
The AOTF10N90 is a versatile device which can be used in many different applications. The device can be used as a switch in a variety of power management systems, as well as a driver in motor control, HVAC systems, and renewable energy applications. The high voltage operation capabilities make it ideal for applications requiring reliable operation and high efficiency, as well as applications where extreme temperatures are present. The optimized gate edge termination and over-temperature protection make it a reliable, high-performance device for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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AOTF10N90 Datasheet/PDF