Allicdata Part #: | AOTF5N50-ND |
Manufacturer Part#: |
AOTF5N50 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 500V 5A TO220F |
More Detail: | N-Channel 500V 5A (Tc) 35W (Tc) Through Hole TO-22... |
DataSheet: | AOTF5N50 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220-3F |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 35W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 620pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 19nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 1.5 Ohm @ 2.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 5A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The AOTF5N50 is a single-level insulated MOSFET, which is also known as an insulated-gate field-effect transistor (IGFET). The device is suitable for use in switching, phase shift, voltage clamping, and other circuit applications.
The AOTF5N50 is a trench type MOSFET, which has a low gate threshold voltage and superior output characteristics due to its efficient series gate architecture. It provides low forward voltage drop and fast switching times, which make it ideal for high power switching and phase shift applications.
The device is constructed with a planar insulated gate, drain, source and body structures. The source and body structures are connected to the source metallization, while the drain and body structures are connected to the drain metallization. The gate is insulated from the source and drain metallizations. The gate bias is applied externally by an appropriate control voltage.
The working principle of the AOTF5N50 is based on the MOSFET’s ability to act as an electronic switch. When a positive voltage is applied to the gate of the device, the current flow between the source and the drain is increased. When the voltage applied to the gate is negative, the current flow is decreased. The AOTF5N50 is beneficial in many applications because of its ability to switch between two distinct voltage levels quickly.
In switching applications, the AOTF5N50 is used to switch digital systems on and off. The device can be used to direct the current flow in a circuit and can act as a buffer between logic devices. This makes it an ideal component for circuit protection and system isolation. The device also finds use in delay and offline pulsers, bistable circuits, and other digital and analog applications.
In phase shift applications, the AOTF5N50 is used to help control the position and speed of motors, wheels, and other mechanical devices. The device is used to create a delay between the input pulse and the output response. This can be used to help control the speed and direction of motors, wheels, or other mechanically moving parts. It can also be used to create a random response in analog circuits.
The AOTF5N50 can also be used as a voltage clamp in low power applications, such as in electronic door locks, LCD backlights, and other consumer electronic devices. The device is capable of clamping an input voltage to a preset limit, thereby providing protection against over-voltage conditions. The device can also be used as a level shifter, a power regulator, and an analog switch.
The AOTF5N50 is a highly reliable and efficient single-level insulated MOSFET device. Its low gate threshold voltage, high output characteristics and fast switching time make it ideal for a wide range of applications. Its ability to switch between two distinct voltage levels quickly makes it a popular choice in digital and analog system designs.
The specific data is subject to PDF, and the above content is for reference
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