AOTF10N60L_002

Vgs(th) (Max) @ Id:	4.5V @ 250µA
Package / Case:	TO-220-3 Full Pack
Supplier Device Package:	TO-220-3F
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	50W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1600pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	40nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	750 mOhm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	10A (Tc)
Drain to Source Voltage (Vdss):	600V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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The AOTF10N60L_002 is a type of Field Effect Transistor (FET), more specifically a Metal-Oxide-Semiconductor FET (MOSFET). It is a single MOSFET which is used in the design of electronic circuits

Application Fields

AOTF10N60L_002 MOSFETs can be used for a range of applications, including as an amplifier and switch, as well as in power management applications. The MOSFET has a high power switching capability and is suitable for high-side and low-side switching applications. It can also be used to control the power supply to sensitive circuits, such as in automotive and industrial applications.

Working Principle

AOTF10N60L_002 MOSFETs are based on the principle of electric field-induced flow of current. They operate by a pair of transistors, with one transistor acting as a gate to control the flow of current through the other transistor. When a voltage is applied to the MOSFET, the gate creates an electric field, which in turn causes a change in the gate-to-source voltage (Vgs). This change in voltage causes a current flow through the transistor. The magnitude of the current flow depends on the magnitude of the applied voltage.The resistance of the transistor also changes based on the amount of Vgs applied. This change in resistance is known as the drain to source resistance (Rds). The MOSFET can be operated in different modes, such as on/off signals, pulse width modulation (PWM) signals and analog signals. AOTF10N60L_002 MOSFETs are also well-suited for signal switching applications, where the device responds very quickly to the changing signal inputs.

Advantage

The AOTF10N60L_002 MOSFET has a variety of advantages over other types of transistors, including its fast switching speeds, low on-state resistance and low input capacitance. It also has a low capacitance-to-voltage ratio, so it can provide better signal isolation than many other types of transistors. The AOTF10N60L_002 is also capable of carrying higher currents than many other types of transistors, making it ideal for power management applications.

In summary, the AOTF10N60L_002 MOSFET is an extremely versatile single transistor that can be used for a variety of applications, from signal switching and power management applications to amplifier and switching applications. It offers high switching speeds, low on-state resistance, a low capacitance-to-voltage ratio and the ability to carry higher current. For these reasons, the AOTF10N60L_002 MOSFET is a popular choice when designing electronic circuits.

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