Allicdata Part #: | 785-1441-5-ND |
Manufacturer Part#: |
AOTF8N80 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 800V 7.4A TO220F |
More Detail: | N-Channel 800V 7.4A (Tc) 50W (Tc) Through Hole TO-... |
DataSheet: | AOTF8N80 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220-3F |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 50W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1650pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 32nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 1.63 Ohm @ 4A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 7.4A (Tc) |
Drain to Source Voltage (Vdss): | 800V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The AOTF8N80 is a type of MOSFET (metallic-oxide-silicon field effect transistor) with an 8 N channel in silicon-gate technology, meaning that it has a very low on-resistance, allowing it to provide high levels of efficiency in an array of applications.
A MOSFET is essentially an electronic switch that can control the flow of current in a circuit. It is made up of three terminals: the source (S), the drain (D) and the gate (G). The source and the drain both act as electrical terminals for carrying the load current, and the voltage applied to the gate terminal allows for the control of the source-drain current.
The AOTF8N80 is specifically designed for use in power management applications, as it has good low-on resistance and fast switching times. Its on-resistance is much lower than it would be in a normal MOSFET, allowing it to provide a high level of efficiency and power management with low power loss and high reliability.
The AOTF8N80 also has an enhanced gate voltage tolerance, allowing it to be used in operations that require more precise control of current flow. This feature makes it particularly well-suited to automotive applications, as well as telecommunication and industrial applications. In addition, its low-voltage operation allows for the use of smaller packages and more efficient circuit layout, saving both space and money.
To understand how the AOTF8N80 works, it is important to understand the concept of "gate voltage threshold", or Vth. This voltage is the voltage required to turn on the transistor. When the gate voltage exceeds this voltage, the transistor is then "on", allowing electricity to flow from the source to the drain.
The AOTF8N80 is designed to operate within a certain range of Vth, depending on the application. This range can be varied by adjusting the gate voltage, meaning that the AOTF8N80 can be used to control the extent of current flow in the circuit. It can therefore be used to regulate the level of power being used in the system.
Another important factor with the AOTF8N80 is its short switching times. With its low gate-drain capacitance, it is possible to switch rapidly between different voltage levels, allowing for fast response times in applications. This makes it especially suitable for applications requiring fast response times or high performance in power management.
Overall, the AOTF8N80 is a reliable and efficient MOSFET solution, with various advantages that make it an excellent choice for power management applications. With its low-voltage operation, fast switching times and varying Vth tolerance, the AOTF8N80 is well-suited to a variety of automotive, telecommunications and industrial applications.
The specific data is subject to PDF, and the above content is for reference
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