| Allicdata Part #: | 785-1428-5-ND |
| Manufacturer Part#: |
AOTF2606L |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Alpha & Omega Semiconductor Inc. |
| Short Description: | MOSFET N-CH 60V 13A TO220F |
| More Detail: | N-Channel 60V 13A (Ta), 54A (Tc) 2.1W (Ta), 36.5W ... |
| DataSheet: |  AOTF2606L Datasheet/PDF |
| Quantity: | 29 |
Specifications
| Vgs(th) (Max) @ Id: | 3.5V @ 250µA |
| Package / Case: | TO-220-3 Full Pack |
| Supplier Device Package: | TO-220-3F |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 2.1W (Ta), 36.5W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 4050pF @ 30V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 75nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 6.5 mOhm @ 20A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 13A (Ta), 54A (Tc) |
| Drain to Source Voltage (Vdss): | 60V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
Description
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AOTF2606L is a type of single MOSFET transistor which can be used in many different applications. It is a bidirectional, high-voltage MOSFET transistor with a breakdown voltage of 600V and a maximum on-state current rating of 6A. The device features low gate charge and low reverse transfer capacitance which make it suitable for applications in high-speed switching and for protection against overcurrents.The application field of AOTF2606L mainly consists of high-voltage and/or high-current applications. It can be used in power converters, motor drives, DC/DC converters, UPS systems, motor control, and protection circuits. It is also suitable for lighting applications. The device has a typical on-state resistance of less than 0.05 Ohm, which makes it suitable for high-end applications requiring low losses.The working principle of AOTF2606L is based on standard MOSFET operation. When a gate voltage is applied to the device, it leads to the formation of a conductive channel between the source and drain terminals. This allows current to flow from the source to the drain when a voltage is applied between them, and the current flowing through the device is proportional to the gate voltage.In order to reduce on-state losses in the device, the gate of the AOTF2606L is biased with a small gate-source voltage. This helps to reduce the drain-source voltage drop when the device is in the on-state. Additionally, a gate resistor can also be used to help maintain a steady voltage at the gate of the device, further reducing losses.The AOTF2606L is a rugged and reliable device, and can be used in a variety of applications with different operating voltages and currents. It is available in a single device or in dual-comparator packages, making it suitable for high-density applications. Lastly, the device has a maximum junction temperature rating of 175°C, meaning it can be used in applications where higher temperatures may be encountered.In conclusion, the AOTF2606L is a reliable and robust MOSFET transistor which can be used in a variety of applications requiring high-voltage and/or high-current operation. Its low-loss properties make it perfect for applications where low on-state losses are essential, such as power converters, motor drives, and DC/DC converters. Lastly, the device is available in a single device or in dual-comparator packages, making it suitable for high-density applications.
The specific data is subject to PDF, and the above content is for reference
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