Allicdata Part #: | AOTF8T50P-ND |
Manufacturer Part#: |
AOTF8T50P |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH |
More Detail: | N-Channel 500V 8A (Tc) 38W (Tc) Through Hole TO-22... |
DataSheet: | AOTF8T50P Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220-3F |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 38W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 905pF @ 100V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 19nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 810 mOhm @ 4A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 8A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The AOTF8T50P is a commonly-used field effect transistor (FET) used as a power switch in a variety of circuits. It is a single, common-source, N-channel FET. The AOTF8T50P is a robust, high-performance device suitable for a variety of applications.
The AOTF8T50P is a modern, single FET design, which has been optimized for higher and lower power ranges. The FET’s minimum breakdown voltage of 80 volts allows it to be used in applications up to a higher power range and its maximum power dissipation of 8W leads to a load of up to 50A. The FET features an on-resistance of 0.1mΩ and a turn-on of less than 1V, making it robust and suitable for further optimization.
When considering applications, AOTF8T50P is most widely used in audio-frequency (AF) power amplifier circuits. In these applications, the FET acts as a switch, modulating the AC signal, and transferring power from the amplifier’s input stage to the amplifier’s output stage. This is achieved by utilizing the FET’s dual-gate structure, which allows the FET to be operated in either a common-source or common-drain mode. Additionally, the FET’s low on-resistance also makes it suitable for use in high-current, high-speed logic circuitry, and as a wide-band amplifier and switch in various radar and communication systems.
In addition to its applications, the AOTF8T50P also features the following main principles of operation. The FET is composed of two main parts: the source and the drain. The source is where the current is generated, and the drain is where the current is sent. The gate is the middle component of the FET, and its voltage induces a change in the current flow from the source to the drain. The gate voltage controls the FET’s conductivity, allowing current to flow from the source to the drain only when the gate voltage is greater than the threshold voltage.
When the gate voltage is below the threshold voltage, the FET is “off.” This state is referred to as the “off-state,” and in this state, the current flow is blocked, and the FET acts as an open switch. When the gate voltage is greater than the threshold voltage, the FET is “on.” This state is referred to as the “on-state,” and in this state, the FET operates as a closed switch, allowing flow from the source to the drain.
In conclusion, the AOTF8T50P is a modern, single, N-channel FET suitable for a variety of applications, including AF power amplifiers circuits, high-speed logic circuitry, and wide-band amplifiers and switches. It is composed of a source, drain and gate, and is operated by controlling the voltage of the gate. The FET can be turned “on” by applying a voltage to the gate greater than the threshold voltage, and “off” when the gate voltage is below the threshold voltage.
The specific data is subject to PDF, and the above content is for reference
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