Allicdata Part #: | 785-1381-5-ND |
Manufacturer Part#: |
AOTF450L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 200V 5.8A TO220F |
More Detail: | N-Channel 200V 5.8A (Tc) 27W (Tc) Through Hole TO-... |
DataSheet: | AOTF450L Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220-3F |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 27W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 235pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 4.4nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 700 mOhm @ 2.9A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 5.8A (Tc) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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AOTF450L is a state-of-the-art digital control high voltage field effect transistor (FET) comprising a single FET with deep submicron CMOS technology. It is ideal for applications requiring a very low on resistance and inrush current of 1-2 mA. AOTF450L is suitable for driving loads up to 200V. It is well suited for applications with low capacitive loads such as LCD displays, AC/DC power supplies and motor drives. The AOTF450L offers high performance and excellent reliability even at its maximum operating temperature of 150°C.
The AOTF450L employs a vertical DMOSFET as the switching element with a thicker gate oxide for maximum stability. The built-in voltage regulator prevents the FET from entering an over-voltage condition during its turn-on and turn-off transitions. The AOTF450L is characterized by its very low on resistance and low gate charge. This makes it ideal for a range of high-speed switching applications. The FET also has excellent thermal resistance and is available in high-efficiency packages.
In its basic form, the FET consists of two drain and two source terminals and a gate for controlling the amount of current that can flow between the drain and source terminals. The amount of current flow is dependent on the voltage applied to the gate and the amount of voltage drop between the drain and source. In applications where a high switching speed is required, the FET’s gate charge further reduces the transition time between the source and drain terminals. This eliminates the need for lengthy delays while the transistor confirms itself.
The AOTF450L is an ideal choice for high-speed, high-frequency switching applications. The FET leverages its industry leading on resistance and gate charge to provide the highest performance in today’s market. With its low capacitive load, it is well-suited for use in AC/DC power supplies, LCD displays and motor drives. The FET is manufactured using a deep submicron CMOS process for maximum reliability and performance even at its maximum operating temperature. The AOTF450L has excellent thermal resistance and is available in high-efficiency packages.
The specific data is subject to PDF, and the above content is for reference
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