Allicdata Part #: | AOTF7T60P-ND |
Manufacturer Part#: |
AOTF7T60P |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 600V 7A TO220F |
More Detail: | N-Channel 600V 7A (Tc) 38W (Tc) Through Hole TO-22... |
DataSheet: | AOTF7T60P Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220-3F |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 38W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 965pF @ 100V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 25nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 1.1 Ohm @ 3.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 7A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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AOTF7T60P is the abbreviation of Advanced Oxide Trench Field Effect Transistor, which is a relatively sophisticated MOSFET device that can provide high performance transistors for professional applications. This type of MOSFET has an extremely low on-state resistance and off-state leakage current. It is designed for high switching performance in high voltage and high current applications. This article will discuss the application field and working principle of AOTF7T60P.
AOTF7T60P is a type of MOSFET transistor with high performance and can be used in various applications. It can be applied in various low- and high-power switching applications such as in power supplies, DC-DC converters, motor control and in lighting system. This MOSFET is also suitable for high frequency switching circuits, high-speed logic, very low power consumption applications, and can also be used as a variable power amplifier. All these features of AOTF7T60P make it an ideal choice for many applications.
The working principle of AOTF7T60P is based on field effect transistor(FET) operation. The FET consists of a conducting channel between source and drain, which is electrically insulated by a gate structure and works by using the field within the channel to control the current flow from the source to the drain. The width of the channel is controlled by the gate voltage applied to it. The gate voltage of AOTF7T60P can be adjusted to select the appropriate level of conduction which is necessary for the application.
The AOTF7T60P also has a low on-state resistance, which helps reduce the power consumption of the device. This type of transistor also has a low turn-on and turn-off times, which is beneficial when it comes to high speed and frequency applications. Moreover, this type of transistor also has a low switching power loss and can handle high voltages as well as a wide temperature range.
In conclusion, the AOTF7T60P is a MOSFET transistor with many unique features. It is an ideal choice for use in many low- and high-power switching applications. It has a low on-state resistance which helps minimize power consumption and also has a low turn-on and turn-off times. The AOTF7T60P also has a low switching power loss and can handle high voltages as well as a wide temperature range. This type of transistor is also suitable for high frequency switching circuits, high-speed logic and very low power consumption applications.
The specific data is subject to PDF, and the above content is for reference
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