Allicdata Part #: | AOTF20N60-ND |
Manufacturer Part#: |
AOTF20N60 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 600V 20A TO220F |
More Detail: | N-Channel 600V 20A (Tc) 50W (Tc) Through Hole TO-2... |
DataSheet: | AOTF20N60 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 600V |
Current - Continuous Drain (Id) @ 25°C: | 20A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 370 mOhm @ 10A, 10V |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 74nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 3680pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 50W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220-3F |
Package / Case: | TO-220-3 Full Pack |
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AOTF20N60 is a MOSFET (metal–oxide–semiconductor field-effect transistor) transistor that has a maximum current rating of 20 amperes and a maximum DC voltage of 60 volts. Its overall size is much smaller than typical transistors, and it can operate over a wide temperature range (from -55°C to +150°C). It also has a low on-state resistance of just 0.050 ohms (at 25°C). This makes it an ideal choice for applications where a compact high-current switching solution is required.
The main application fields for the AOTF20N60 are in the automotive, aerospace, medical and telecommunications industries. In the automotive industry, it can be used for controlling current flow to various vehicle systems such as electric power steering, air conditioning, and engine control. In the aerospace industry, it can be used in aircraft and spacecraft systems, such as navigation, communication, control and monitoring, and engine control and fuel injection. In the medical field, it can be used in pacemakers, defibrillators, and other medical devices. In the telecommunications industry, it can be used in switching systems and other high-speed communications systems.
The working principle of the AOTF20N60 is based on the same principles as other transistors. It is composed of an insulated gate, a source, drain, body, and source-drain connection, with a gate oxide layer and a dielectric material between the gate and surface. The gate oxide layer is used to block current flow from the source to the drain, and vice versa. When a voltage is applied to the gate, it attracts electrons from the source, which cause a channel to form between the source and drain. This allows current to flow from the source to the drain, and vice versa.
The AOTF20N60 uses a novel combination of technologies to provide superior performance and durability. It uses a special on-state resistance (RDS(on)) curve that is optimized for maximum current capability, while still providing excellent thermal management characteristics. The power dissipation of the AOTF20N60 is also very low, meaning that it can operate at extremely high current levels without overheating. The latch-up immunity of the device is also excellent, meaning that it can be used in high-speed switching circuits without the risk of malfunctioning.
In conclusion, the AOTF20N60 is an ideal solution for applications where a compact high-current switching solution is required. It has a very low on-state resistance and a wide operating temperature range, making it suitable for a range of applications. Its superior thermal management characteristics and latch-up immunity make it a great choice for high-speed switching circuits. The AOTF20N60 is a versatile and reliable device for automotive, aerospace, medical, and telecommunications applications.
The specific data is subject to PDF, and the above content is for reference
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