AOTF6N90

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The AOTF6N90 is a single trench MOSFET technology developed by Efficient Power Conversion (EPC). It is an advanced technology for designing and manufacturing low-voltage power field effect transistors (FETs). This advanced MOSFET technology offers remarkable performance and low on-resistance. Its integrated features include low gate charge, low gate resistance (Rg), fast switch rates, advanced dielectric isolation and surface mountable devices.

AOTF6N90 is a single trench MOSFET (metal oxide semiconductor field effect transistor) technology featuring single-sided gate electrodes. A MOSFET works in such a way that when a small voltage is applied between the gate and the source regions, a conductive channel is formed at the bottom of the MOSFET due to the electrical field applied. This opens the device up to current flow. The AOTF6N90 FET also features a single-sided electrode design, which allows for a more efficient use of the space that the device occupies and reduces the amount of dielectric material used. The technology also features a high breakdown voltage threshold, low gate charge and reduced RDS(on). It is also characterized by very low gate-source charge, less power dissipation at high frequencies, high frequency stability, and fast switching response.

The AOTF6N90 is a low voltage FET with a gate voltage of 4.5 volts. It is designed to operate in the low-voltage range of 5 to 60 volts, with a maximum junction-to-source voltage of 120 volts. This device has a high voltage tolerance of 100 volts and a maximum drain-to-source voltage of 200 volts. This makes it ideal for applications that require high voltage operation. The AOTF6N90 FET is suitable for applications such as switch mode power supplies, power amplifiers and motor drives. It is also suitable for high-speed switching applications such as Inductive Load Switches, Class-D Audio Power Amplifiers, Fibre-Optics and RF Amplifiers.

The AOTF6N90 is a low-on-resistance MOSFET, which makes it ideal for continuous and low-frequency operations such as motor control and power-switching applications. The device can handle high drain current of up to 8A. It has a low gate capacitance of 2.5pF, which provides fast switching and high speed switching operations. The device also features a short circuit and fault protection which makes it ideal for a wide range of power applications where protection is vital. The device is provided in an encapsulated package, which ensures the device is protected from harsh environmental conditions such as humidity, temperature and mechanical shock.

The AOTF6N90 is an advanced MOSFET technology designed to reduce power dissipation while providing high performance, low on-resistance, fast switching and protection in an efficient and cost-effective package. Due to its integrated features, as well as its performance characteristics, the AOTF6N90 MOSFET is suitable for a wide range of power applications such as switching, amplifying, motor control and power-switching applications. This advanced technology provides a reliable and cost-effective solution for designers in need of efficient and versatile power switching components.

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