| Allicdata Part #: | AOTF4N90-ND |
| Manufacturer Part#: |
AOTF4N90 |
| Price: | $ 0.44 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Alpha & Omega Semiconductor Inc. |
| Short Description: | MOSFET N-CH 900V 4A TO220F |
| More Detail: | N-Channel 900V 4A (Tc) 37W (Tc) Through Hole TO-22... |
| DataSheet: | AOTF4N90 Datasheet/PDF |
| Quantity: | 1000 |
| 1000 +: | $ 0.40453 |
| Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
| Package / Case: | TO-220-3 Full Pack |
| Supplier Device Package: | TO-220-3F |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 37W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 880pF @ 25V |
| Vgs (Max): | ±30V |
| Gate Charge (Qg) (Max) @ Vgs: | 22nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 3.6 Ohm @ 2A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 4A (Tc) |
| Drain to Source Voltage (Vdss): | 900V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The AOTF4N90 is a single-channel R&D (research and development) field-effect transistor (FET) designed specifically for use in the automotive, industrial, and light power control applications. The device incorporates a high-voltage threshold as well as low-power consumption to provide efficient operation in a wide range of power control system architectures.
The AOTF4N90 is a normally-on type triode field-effect transistor, which includes a gate, a source, and a drain all connected to two metal plates. An electrical field is established between the gate and the source or drain. Furthermore, the gate is insulated from the source and drain using a thin oxide layer. An electrical current flows from source to drain if voltage is applied to the gate. The current is proportional to the gate-source voltage, allowing the device to be used as a switching device.
The AOTF4N90 can operate over a wide voltage range, up to 200V and have very low on-resistance making them ideal for use in power control applications. The device features a built-in self-protection mechanism that prevents the device from being over-voltaged or reverse biased. The device also features a low thermal resistance, allowing the device to dissipate heat more quickly and run more efficiently.
The AOTF4N90 also has high immunity against Electro-Magnetic Interference (EMI). This device is in compliance with the EMC standard IEC 61000 and includes built-in protection for EMI. This high level of EMI immunity makes this device ideal for use in automotive and industrial applications where high levels of EMI may be present.
The AOTF4N90 is also highly-efficient in operation and has low switching losses, making it suitable for applications such as lighting and motor control. The device requires a minimum current for proper operation and has a low turn-on and turn-off time, allowing faster switching times and improved system efficiency. The device also has low power consumption, making it ideal for applications with limited power resources.
The AOTF4N90 is a high-performance device designed to meet the requirements of a variety of applications. Its low on resistance, EMI immunity, and efficient operation make it an ideal choice for power control applications in the automotive, industrial and light power control systems.
The specific data is subject to PDF, and the above content is for reference
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AOTF4N90 Datasheet/PDF