AOTF7N60FD Allicdata Electronics
Allicdata Part #:

AOTF7N60FD-ND

Manufacturer Part#:

AOTF7N60FD

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET N-CH 600V 7A TO220F
More Detail: N-Channel 600V 7A (Tc) 39W (Tc) Through Hole TO-22...
DataSheet: AOTF7N60FD datasheetAOTF7N60FD Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4.2V @ 250µA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220-3F
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 39W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 995pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 1.45 Ohm @ 3.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The AOTF7N60FD is a high voltage power MOSFET from AOS company. It is a single, insulated-gate field-effect transistor (IGFET), commonly known as an “enhanced Mode” MOSFET. The AOTF7N60FD offers high performance in an industry standard and compact 7-lead PowerFLAT-5 package.

AOTF7N60FD’s application field includes switch mode power supplies (SMPS) with high voltage, high frequency, and high current demand such as those in computer networks, telecommunications infrastructure, medical imaging, industrial process control, intelligent transportation systems, and renewable energy systems. Additionally, it is suitable for high frequency DC-DC converters and 0.2mOHM ohmic contact when used for power distribution.

The internal construction of the AOTF7N60FD is composed of an insulated gate, a source, a drain, and a body. In the device, an electric field is created by voltage applied to the gate, which in turn controls the current flowing from source to drain. Specifically, the gate voltage controls the current’s magnitude. In the ‘on’ state, the AOTF7N60FD has a low on-resistance, allowing for higher current throughput for the same gate voltage.

The AOTF7N60FD also has excellent reverse blocking capability and high dV/dt immunity. These advantages increase reliability and make it suitable for high voltage applications. The device also incorporates an internal fast body diode clamping to protect the device from high-voltage transients.

The AOTF7N60FD’s special features and performance conforms to the international safety standards including meeting IEC60664/EN/UL 60664/IEC60664-1/EN60664-1/UL6064-1 requirements. Its admissible insulation voltage is 5.5 times higher than its rated working voltage and it undergoes a Pin-Connection-Testing to ensure high reliability and interchangeability.

In conclusion, the AOTF7N60FD is a high-voltage, single insulated-gate field-effect transistor. It is suitable for use in switch mode power supplies, DC-DC converters, power distribution and other similar applications with high current demands. Its superior performance and high reliability make it an ideal choice for industrial, automotive and consumer applications.

The specific data is subject to PDF, and the above content is for reference

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