AOTF15B60D Allicdata Electronics
Allicdata Part #:

AOTF15B60D-ND

Manufacturer Part#:

AOTF15B60D

Price: $ 0.79
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: IGBT 600V 30A 50W TO220F
More Detail: IGBT 600V 30A 50W Through Hole TO-220-3F
DataSheet: AOTF15B60D datasheetAOTF15B60D Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1000 +: $ 0.71938
Stock 1000Can Ship Immediately
$ 0.79
Specifications
Power - Max: 50W
Supplier Device Package: TO-220-3F
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Reverse Recovery Time (trr): 196ns
Test Condition: 400V, 15A, 20 Ohm, 15V
Td (on/off) @ 25°C: 21ns/73ns
Gate Charge: 25.4nC
Input Type: Standard
Switching Energy: 420µJ (on), 110µJ (off)
Series: Alpha IGBT™
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 15A
Current - Collector Pulsed (Icm): 60A
Current - Collector (Ic) (Max): 30A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: --
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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IGBTs are highly efficient and reliable components used in a variety of applications to control current flow. The AOTF15B60D is a single IGBT featuring a collector-emitter voltage rating of 600V and collector current of 40A. It is designed for applications such as controlling power in motor drives, AC inverters and high-frequency switching. In addition, it has a high operating temperature range that makes it ideal for use in harsh environments.

The AOTF15B60D is a three-terminal device composed of an emitter, a collector, and a gate. The emitter supplies the current to be switched and the collector is the connection at which the load is connected. The gate is used to control the current flowing through the device. When the gate voltage is increased, the current flows through the device. When the gate voltage is decreased, the current is cut off. The AOTF15B60D’s internal structure includes a vertical power MOSFET, which is a semiconductor switch with a gate between two silicon layers. Its low gate-emitter voltages and high current-carrying capacity make it an excellent choice for the applications mentioned above.

The AOTF15B60D has very low on-state voltage drop and excellent capacitive immunity, which makes it ideal for AC and variable frequency drives. Moreover, it also has very low EMI, which reduces noise and potential for interference with sensitive components. This, in turn, helps reduce the overall cost of the design. The AOTF15B60D is rated to operate from -40 ºC to 150 ºC, making it suitable for high-temperature applications. Furthermore, it is also very reliable, with an MTBF (mean time between failures) of 62.9 years.

In summary, the AOTF15B60D is a single IGBT designed for applications such as controlling power in motor drives, AC inverters and high-frequency switching. It features a collector-emitter voltage rating of 600V and a collector current rating of 40A. The device\'s highly efficient and reliable design, low gate-emitter voltages, high current-carrying capacity, and high operating temperature range makes it an ideal choice for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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