AOTF5B65M1

Power - Max:	25W
Supplier Device Package:	TO-220
Package / Case:	TO-220-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Reverse Recovery Time (trr):	195ns
Test Condition:	400V, 5A, 60 Ohm, 15V
Td (on/off) @ 25°C:	8.5ns/106ns
Gate Charge:	14nC
Input Type:	Standard
Switching Energy:	80µJ (on), 70µJ (off)
Series:	Alpha IGBT™
Vce(on) (Max) @ Vge, Ic:	1.98V @ 15V, 5A
Current - Collector Pulsed (Icm):	15A
Current - Collector (Ic) (Max):	10A
Voltage - Collector Emitter Breakdown (Max):	650V
IGBT Type:	--
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Tube

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AOTF5B65M1 is a single IGBT (Insulated Gate Bipolar Transistor) module. It is used in power electronics controlling and switching applications. The device is capable of handling extremely high voltage and power level, and is used in critical applications like renewable energy power systems, industrial motor control, railway traction control, and military power supplies.The AOTF5B65M1 is based on the Vertical Diffused Metal Oxide Semiconductor (VDMOS) technology. This technology is characterized by using a metal-oxide-semiconductor field-effect transistor (MOSFET) to achieve very high operating voltages and switching speed capabilities. The main components of the device are the gate, the drain, the source, and the body (or substrate).The working principle of the AOTF5B65M1 is similar to other IGBTs. It operates as a voltage controlled device, meaning its behavior is determined by the applied voltage. When an appropriate voltage is applied to the gate, the device will switch from the ‘on’ state to the ‘off’ state. When the voltage is removed, the device will switch back to the ‘on’ state.When a suitable voltage is applied to the AOTF5B65M1, it will block the flow of current between the source and the drain. It is also capable of operating in either the linear or the inverse region. In the linear region, the drain current is proportional to the gate voltage, while in the inverse region the drain current is inversely proportional to the gate voltage.The device has several unique properties that make it ideal for a number of applications. It is able to operate at very high voltages and current levels without heat generation, and its low on-state voltage drop increases the efficiency of switching power supplies. Additionally, its high switching speed makes it suitable for a range of applications that require fast response times.The AOTF5B65M1 is available in a variety of package types, and is capable of handling up to 1100A at up to 500V. It is also temperature range tested from -40°C to 125°C, making it suitable for a wide range of operating environments. The device also features internal soft-start functionality, which is useful in applications that require careful voltage regulation.The AOTF5B65M1 is a versatile device that is suitable for a range of power electronics controlling and switching applications. It is well suited for the control of high-voltage and high-current circuits, and can be used to implement solutions in a variety of industrial, automotive, and military systems.

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