AOTF12N60FD Allicdata Electronics
Allicdata Part #:

AOTF12N60FD-ND

Manufacturer Part#:

AOTF12N60FD

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET N-CH 600V 12A TO220F
More Detail: N-Channel 600V 12A (Tc) 50W (Tc) Through Hole TO-2...
DataSheet: AOTF12N60FD datasheetAOTF12N60FD Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220-3F
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 50W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2010pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 650 mOhm @ 6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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The AOTF12N60FD is a high-speed Field-Effect Transistor (FET) that is commonly used in a variety of applications. It\'s a versatile transistor and offers flexible use for a lot of applications, due to its wide voltage range, fast switching capabilities, and high current capability.

AOTF12N60FD Application Fields and Working Principle

The AOTF12N60FD is primarily used in applications where space-saving, low on-resistance, and fast switching speed are necessary. It is commonly used in Power Supply, Voltage Regulator Modules (VRMs), load switches, and portable device voltage protection circuits. In addition, it can also be used in DC/DC converters, automotive systems, and any other application that requires a low on-resistance.

The AOTF12N60FD is a single-FET device, meaning there are two JFETs in parallel which allow it to be a high speed device. These two JFETs form an "H-bridge" or "Half Bridge" configuration, which means that both FETs can be used to switch voltage or current. Furthermore, this H-bridge configuration also allows for a wide range of output voltages, depending on the gate voltage applied to the FETs.

The AOTF12N60FD works in a similar manner to a standard FET. It has a source, gate, and drain terminals and current flows from source to drain when a voltage is applied to the gate. As the voltage applied to the gate increases, so too does the current flowing through the FET, allowing for a wide range of current levels. The on-resistance of the AOTF12N60FD is quite low due to the two parallel JFETs and this allows for very fast switching.

The AOTF12N60FD has a wide range of operating voltages and can handle up to 100V, which means it can be used in a variety of applications. Furthermore, its low on-resistance makes it ideal for applications where size is important and where fast switching speeds are essential.

Overall, the AOTF12N60FD is a versatile transistor that can be used in a variety of applications. It offers high-speed switching capabilities, a low on-resistance, and wide voltage range, making it a reliable option for many applications. As such, the AOTF12N60FD is a great choice for any application requiring a reliable and high-speed switch.

The specific data is subject to PDF, and the above content is for reference

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