AOTF15B65M2 Allicdata Electronics
Allicdata Part #:

785-1769-ND

Manufacturer Part#:

AOTF15B65M2

Price: $ 1.43
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: IGBT 650V 15A TO220
More Detail: IGBT 650V 30A 36W Through Hole TO-220
DataSheet: AOTF15B65M2 datasheetAOTF15B65M2 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: $ 1.29780
10 +: $ 1.17243
25 +: $ 1.04681
100 +: $ 0.94217
250 +: $ 0.83747
500 +: $ 0.73278
1000 +: $ 0.60716
Stock 1000Can Ship Immediately
$ 1.43
Specifications
Power - Max: 36W
Supplier Device Package: TO-220
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Reverse Recovery Time (trr): 298ns
Test Condition: 400V, 15A, 20 Ohm, 15V
Td (on/off) @ 25°C: 15ns/94ns
Gate Charge: 32nC
Input Type: Standard
Switching Energy: 290µJ (on), 200µJ (off)
Series: Alpha IGBT™
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 15A
Current - Collector Pulsed (Icm): 45A
Current - Collector (Ic) (Max): 30A
Voltage - Collector Emitter Breakdown (Max): 650V
IGBT Type: --
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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AOTF15B65M2 is a type of insulated-gate bipolar transistors (IGBTs) produced by the California-based American Opto Plus Technology Corporation. This device can be used in a variety of applications and is suitable for medium- and high-voltage applications. It is a single-channel IGBT that has a built-in Trench Gate Field End-Stop (TGFES) and low levels of internal capacitance and parasitic inductance. The device is can provide isolation, dV/dt and current capacitance performance. It is used for applications including motor drives, UPS systems, motor and solenoid control, robotics, DC-DC converters, and more.
Operating Principle
AOTF15B65M2 is based on the principle of insulated-gate bipolar transistor, also known as IGBT. An IGBT is an electronic component consisting of two parts, a bipolar transistor and an insulated gate field-effect. The bipolar transistor is used to control the current flow between the collector and emitter contacts, while the insulated gate field-effect part provides voltage control. When a positive potential is applied to the gate contacts of the IGBT, a current of electrons flows from the emitter contact to the collector contact and the transistor is active. When this potential is removed, the current stops and the transistor is no longer active.
Packaging
The AOTF15B65M2 is offered in a standard TO-252 (DPAK) surface mount package and a maximum junction temperature of +150°C. The component can also be supplied in other packages like the TO-220, TO-263 and more, based on the application requirement.
Features and Benefits
AOTF15B65M2 devices come with a host of features and benefits. Some of these include low on-state voltage drop, low output capacitance, short circuit and over voltage protection, fast switching speeds, and high current ratings. The device also protects against surge voltage and reverse battery conditions, making it a reliable component for a variety of medium- and high-power applications.
Applications
The AOTF15B65M2 is a suitable component for medium- and high-power, medium- and high-voltage applications. It can be used in a variety of applications such as motor drives, UPS systems, motor and solenoid control, robotics, DC-DC converters, and so on. It is also suitable for industrial, automotive, power supplies and consumer electronics applications.
Conclusion
The AOTF15B65M2 is a single channel IGBT with built-in Trench Gate Field End-Stop (TGFES) for enhanced performance. It features low on-state voltage drop, fast switching speeds, and high current ratings. It is widely used in medium- and high-power applications such as motor drives, UPS systems, motor and solenoid control, robotics, DC-DC converters, and much more.

The specific data is subject to PDF, and the above content is for reference

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