AOTF4T60P Allicdata Electronics
Allicdata Part #:

AOTF4T60P-ND

Manufacturer Part#:

AOTF4T60P

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Alpha & Omega Semiconductor Inc.
Short Description: MOSFET N-CH
More Detail: N-Channel 600V 4A (Tc) 35W (Tc) Through Hole TO-22...
DataSheet: AOTF4T60P datasheetAOTF4T60P Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220-3F
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 35W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 522pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 2.1 Ohm @ 2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

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AOTF4T60P Application Field and Working Principle

The AOTF4T60P is a semiconductor device that belongs to the family of Field Effect Transistors (FETs). FETs are specially designed for power switching applications and are often used in a variety of switching, amplifier and voltage regulator applications.

The AOTF4T60P is an enhancement type MOSFET transistor, which is a type of Field Effect Transistor (FET). MOSFETs are transistors that are made up of metal-oxide-semiconductor (MOS) laminated layers. These devices have gate electrodes that are insulated from the substrate and channel by a give oxide layer. The voltage on the gate electrode controls the channel width and the flow of current through the device, with higher voltage producing a larger channel and larger current.

The AOTF4T60P is a single transistor package, meaning that the device has no additional active elements, such as resistors or capacitors, integrated with the transistor itself. This makes the device highly versatile, allowing it to be used in a variety of different applications.

The AOTF4T60P is designed for use in power switching applications, thanks to its low on-resistance, high currents, and high thermal performance. It has an on-resistance of 4.6 ohms, a maximum current of 10 A, and a maximum power of 60 W. The device also has an integrated over-voltage, over-current, and thermal protection for added safety, ideal for applications that may require higher peak currents.

As for its working principle, the AOTF4T60P is a voltage controlled device, meaning that when a voltage is applied to the gate electrode, a current is created in the channel. This current, in turn, controls the voltage between the device’s source and drain. With an input voltage, the AOTF4T60P operates in either an ON or OFF state. The device can operate at voltages between the 12V and 24V, making it ideal for a variety of different applications.

The AOTF4T60P is an ideal choice for applications that require a device that can efficiently switch between an ON and OFF state. Some of the applications that the device is suitable for include motor control, HVAC control, lighting control, and other power control applications.

In conclusion, the AOTF4T60P is a single transistor package designed for use in power switching applications, thanks to its low on-resistance, high currents, and high thermal performance. The device operates in either an ON or OFF state and is suitable for a variety of applications. As such, the AOTF4T60P is an ideal choice for applications that require efficient and reliable power control solutions.

The specific data is subject to PDF, and the above content is for reference

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