AOTF4N60L

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The AOTF4N60L is a non-protected, logic level, enhancement, N-Channel insulated gate bipolar transistor (IGBT). AOTF4N60L, which is designed and manufactured by Advanced Power Electronics Corp. (APE), is designed to reduce power losses in switching and inductive loads.

The AOTF4N60L is designed to be used primarily in applications such as the DC-DC converters, automotive power conversion, field power supplies, and applications requiring tight regulation of output voltage, or tight current control. In general, this type of IGBT can be used in all applications calling for load current regulation, as well as motor control.

The AOTF4N60L has an integrated N-channel MOSFET which is capable of switching up to 60 amps at a voltage range of 4 V to 40 V, with a collector-emitter voltage of 600 V and an on-state resistance of 50.4 mΩ.

The working principle of the AOTF4N60L is such that when the gate voltage is greater than the threshold voltage, the device will turn on and allow current to flow from the source to the drain. In the avalanche mode, the MOSFET works by allowing the mini avalanche current to flow through the channel allowing it to amplify the signal. In the Pulse Width Mode (PWM), the operation of the MOSFET is controlled using the Pulse Width Modulation which switches the current off and on very quickly, allowing you to control the amount of current that is flowing.

The AOTF4N60L has a low gate threshold voltage of 4.5 V plus 2.5 V making it ideal for low voltage circuits. Additionally, the device features low on-state resistance which helps reduce power losses in the circuit. This device also offers a variety of protection features such as over-voltage protection, thermal shutdown and short circuit protection.

In conclusion, the AOTF4N60L is a single N-channel, logic level IGBT which offers excellent performance in applications requiring tight regulation of output voltage or current control. It is well-suited for a variety of applications, such as DC-DC converters, automotive power conversion, field power supplies and motor control. Its low gate threshold voltage, low on-state resistance and integrated protection features make it an ideal choice for these type of applications.

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