Allicdata Part #: | 785-1715-5-ND |
Manufacturer Part#: |
AOTF11C60PL |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 600V 11A |
More Detail: | N-Channel 600V 11A (Tc) 37W (Tc) Through Hole TO-2... |
DataSheet: | AOTF11C60PL Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220-3F |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 37W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2333pF @ 100V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 50nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 400 mOhm @ 5.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 11A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The AOTF11C60PL field-effect transistor (FET) is a type of transistor that uses an electric field to control the movement of electrons. It consists of a metal oxide semiconductor (MOS) between two metallic conductors known as the source and drain. The metal oxide layer, in turn, is sandwiched between a gate and the substrate. FETs are widely used in low-power applications because of their low voltage and current requirements, and they are very good at sourcing and sinking both small and large amounts of current.
The AOTF11C60PL is a single-channel enhancement mode metal-oxide semiconductor FET (MOSFET). These types of transistors use a small electric field to control the current flow through the transistor. The gate terminal of the AOTF11C60PL is connected to a voltage source (VGS), which is responsible for creating the electric field. When VGS is increased, the electric field is increased, thereby increasing the number of electrons that can flow from the source to the drain and vice versa.
The AOTF11C60PL is a high current, low-voltage FET, which makes it ideal for applications where high current is needed at low voltage levels. It also provides excellent noise rejection and low power consumption. Because of its high current capacity, it is often used in automotive, industrial, telecommunications, and medical applications.
The working principle of the AOTF11C60PL is quite simple. When the voltage at the gate terminal (VGS) is increased, the number of electrons that can flow between the source and the drain is also increased. This, in turn, increases the current flow through the transistor. Conversely, when the voltage at the gate terminal (VGS) is decreased, the number of electrons that can flow between the source and drain is also decreased, thereby reducing the current flow.
The AOTF11C60PL is especially useful in applications where high current is needed but the voltages involved are low. This includes applications such as motor controls, power supplies, and amplifiers, where high current is needed but voltages in the range of 3 V to 20 V are typically used. As such, the AOTF11C60PL is becoming increasingly popular in these sorts of applications.
The AOTF11C60PL is a powerful and versatile transistor that can meet the needs of many applications. Its high current and low voltages allow for high-performance designs, and its excellent noise rejection and low power consumption make it an excellent choice for a variety of applications. Furthermore, its ease of use and low price make it an attractive option for many designers.
The specific data is subject to PDF, and the above content is for reference
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