AOTF12T50P

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The AOTF12T50P is an enhancement-mode vertical-channel N-channel MOSFET that is constituted by a monolithic MOS (Metal Oxide Semiconductor) integrated circuit. It features a drain-source breakdown voltage of 50 V, a drain-source on-state resistance of 12 mΩ, a gate threshold voltage of 1.7 V, and a gate-source voltage of +/-20 V. Below this technical summary of the AOTF12T50P, we provide a detailed overview of the application field and working principle of this device.

Application field

The AOTF12T50P is engineered for low-side applications in battery-powered equipment, such as mobile phones, tablets, health care devices, solar panels, and smartwatches. Besides, it presents excellent ESD- and latch-up-resistance, making it suitable for precision handling circuits and high-speed switching operations.

Working principle

As an enhancement-mode vertical-channel N-channel MOSFET, the AOTF12T50P is usually connected in a circuit that uses a single supply voltage. The circuit, which consists of the AOTF12T50P and the associated load circuit, contains basically four elements: a source, a body (often referred to as the substrate), a gate, and a drain. The source, body and drain of the MOSFET are formed by the N-type material, and the gate is an insulated region, which is made out of heavily doped P-type material. This construction creates a so-called “metal-oxide-semiconductor structure”.

The working principle is based on an electrostatic attraction between gate and source and drain terminals and thereby allows an easy controlled three-terminal switching action of the MOSFET. The so controlled current drawn from the source is a function of the applied voltage between the gate and source. By setting the appropriate voltage between gate and source, the threshold voltage to enable the drain current can be set. Therefore, the required gate-source-voltage to turn on the AOTF12T50P depend on a number of factors like the supply voltage, temperature and channel length. If a negative gate-source-voltage is applied, the drain current is shut off. These gate-source-voltage thresholds disable or turn-on the AOTF12T50P, making it a very useful device in power applications smart phones and gadgets, where very low-on resistance is required.

Additionally, the AOTF12T50P also provides some protection with its reverse-drain-source leakage current of 5 μA at 10 V. This means that the maximum current that flows into the source pin is limited to 5 μA to ground, even if the drain pin is over-voltaged. In this way, the AOTF12T50P helps to protect the system against overvoltage.

In summary, the AOTF12T50P is an enhancement-mode vertical-channel N-channel MOSFET, which provides an excellent device for low-side applications in battery-powered equipment. Featuring a drain-source on-state resistance of 12 mΩ, a gate threshold voltage of 1.7 V, and a gate-source voltage of +/-20 V, it enables a very low-on resistance switch and offers some protection with its reverse-drain-source leakage current of 5μA at 10 V. Therefore, the AOTF12T50P has wide application field and provides the necessary features for reliable operations in smartphones, tablets, and other battery powered devices.

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