AOTF14N50FD

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-220-3 Full Pack
Supplier Device Package:	TO-220-3F
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	50W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2010pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	47nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	470 mOhm @ 7A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	14A (Tc)
Drain to Source Voltage (Vdss):	500V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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AOTF14N50FD Application Field and Working Principle

An AOTF14N50FD device is a type of Field Effect Transistor (FET) commonly used in high-frequency applications. It is a single-gate, unipolar, conductive-gate MOSFET with a gate-drain control input. It is characterized by low gate threshold voltage, low on-state resistance, and good gate capacitance. The AOTF14N50FD is designed to offer high-frequency operation and large output current capability.The main application field of the AOTF14N50FD is in high-frequency switching and power amplification circuits. Since this type of FET has a very low on-state resistance and relatively low driving voltage, it is ideal for applications that require a large current capability at high frequencies. The device is commonly used in power amplifiers, switched-mode power supplies, and RF switching and switching circuits.The working principle of the AOTF14N50FD is based on the principle of a field effect transistor. When a positive voltage is applied to the gate, electrons flow from the source to the drain through the channel. This current flow is responsible for the operation of the FET at high frequencies.The size of the channel affects the device\'s on-state resistance and its threshold voltage. The channel length of the AOTF14N50FD is designed to maximize the currents that can be passed through the device at high frequencies. Additionally, the device features an increased capacitance, making it suitable for high-frequency operation.The device is also designed with a high breakdown voltage, offering improved voltage control and current protection. The device is fabricated using a MOS technology technique and is therefore delicate to handle. It requires standard ESD control when handling.The AOTF14N50FD FET is a versatile transistor capable of providing a high gain, low power consumption, and low thermal resistance. It is used in a wide range of high-frequency applications and is popular in amplifiers, switching circuits, and power supplies for its reliable performance. It is also relatively easy to work with and is ideal for high-speed applications.

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