Allicdata Part #: | AOTF2N60-ND |
Manufacturer Part#: |
AOTF2N60 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Alpha & Omega Semiconductor Inc. |
Short Description: | MOSFET N-CH 600V 2A TO220F |
More Detail: | N-Channel 600V 2A (Tc) 31W (Tc) Through Hole TO-22... |
DataSheet: | AOTF2N60 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220-3F |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 31W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 325pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 11.4nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 4.4 Ohm @ 1A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 2A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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AOTF2N60 is a N-channel enhancement- mode, vertical field effect transistor (FETs) developed for applications where low on-state resistance and high speed switching are desired. Compared to MOSFETs, FETs offer several advantages, such as higher current handling, faster switching, and improved power dissipation. The AOTF2N60 is particularly suited for low frequency applications such as switching and amplifier circuits.
The AOTF2N60 is designed with an optimized structure to enhance its performance. It has a highly conductive channel between the source and the drain, and its features low internal gate capacitance which allow for high speed switching and low power dissipation. The device also features a low on-state resistance, making it particularly suitable for power switching applications.
The AOTF2N60 is most commonly used in switching circuits where low on-state resistances and fast switching times are desired. The low on-state resistance allows for efficient power transfer from the source to the load, while the fast switching times make it well-suited for applications that require fast response times, such as amplifiers or motor control. Most applications using this transistor will also require an external driver circuit to boost the transistor\'s gate voltage to ensure its proper operation.
The working principle of the AOTF2N60 is similar to other FETs. When a positive voltage is applied to the gate, it creates an electric field across the P-N junction, creating a conductive path between the source and the drain. This allows for current to flow between the source and the drain, which can be used to switch a load or amplify a signal. When the gate voltage is reversed, the drain and the source are no longer connected and the current flow is stopped.
In conclusion, the AOTF2N60 is an N-channel FET designed for low frequency applications where low on-state resistance and high speed switching are desired. Its optimized structure and low gate capacitance allow for fast switching speed and low power dissipation. Most applications using this transistor require an external driver circuit to boost the gate voltage and ensure its proper operation. The AOTF2N60 is a versatile and cost-effective solution for low frequency switching and amplifying.
The specific data is subject to PDF, and the above content is for reference
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