APT1001R1BN

APT1001R1BN is a single p-channel enhancement-mode Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) device, manufactured by NVE Corporation. It is a low-threshold device that operates at a supply voltage ranging from 8.0 V up to a maximum of 20 V, and features a drain current ranging from –20 mA up to a maximum of –2.5 A. The device also features a low input capacitance at low gate-source voltages.

APT1001R1BN is used in a variety of applications such as switching applications, self-biased circuits, and load switches. It can be used in a variety of configurations including: single-ended, complementary, and cascode products. It is also commonly used in digital, analog, and power management circuits.

The working principle of the APT1001R1BN is relatively simple. In most configurations, the device consists of three terminals: a gate, a source, and a drain. The electric field created by the applied gate voltage controls the flow of current through the channel, thereby allowing for the adjustment of the drain current.

When the gate voltage is increased, the channel between the source and the drain is widened. This results in an increased drain current, and the device is said to be in the "enhancement-mode." Conversely, when the gate voltage is decreased, the channel between the source and the drain is narrowed. This results in a decreased drain current, and the device is said to be in the "depletion-mode."

In an enhancement-mode configuration, the device can be used as an electronic switch. When the gate voltage is high enough, the device will turn on and allow current to flow through. Conversely, when the gate voltage is low, the device will turn off and no current can flow.

In a depletion-mode configuration, the device can be used as a linear regulator. When the gate voltage is high enough, the device will reach a maximum of current flow and the drain current will remain stabilized, regardless if there are changes in the source voltage. Conversely, when the gate voltage is low, the drain current will remain constant, regardless if there are changes in the source voltage.

In summary, the APT1001R1BN is a single p-channel enhancement-mode MOSFET device, suitable for a variety of applications such as switching, self-biased, and load switches. It operates at a supply voltage of 8 to 20 V and has a drain current of –20 mA to -2.5 A. The device can be used in single-ended, complementary, and cascode products, and is commonly used in digital, analog, and power management circuits. The working principle of the device is to control the flow of current through the channel by adjusting the gate voltage.