AS6C1008-55STIN

Series:	--
Packaging:	Tray
Part Status:	Active
Memory Type:	Volatile
Memory Format:	SRAM
Technology:	SRAM - Asynchronous
Memory Size:	1Mb (128K x 8)
Write Cycle Time - Word, Page:	55ns
Access Time:	55ns
Memory Interface:	Parallel
Voltage - Supply:	2.7 V ~ 5.5 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	32-LFSOP (0.465", 11.80mm Width)
Supplier Device Package:	32-sTSOP I

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Application Field of AS6C1008-55STIN

AS6C1008-55STIN is a low-power CMOS static random access memory (SRAM) designed specifically for systems that place maximum emphasis on register designs and memory-system performance. It has a relatively high degree of integration and a wide range of applications.In the automotive industry, AS6C1008-55STIN can be used in a variety of electronic control systems and safety systems, such as airbag systems. It can effectively store information such as driving information and operational parameters and ensure the normal operation of airbag systems.In industrial automation applications, AS6C1008-55STIN can be used as axial control systems, fieldbus controllers, and process controllers, performing various control and processing tasks. It can be used as a local host to control various local data acquisition and processing operations, as well as non-real-time control operations.In consumer electronics, AS6C1008-55STIN can be used in portable electronic devices such as wireless car keys, digital cameras and GPS navigation systems.In the field of cryptocurrency, AS6C1008-55STIN can be used as a memory module to store a large amount of digital currency data, ensuring the security and stability of the digital currency network.

Working Principle of AS6C1008-55STIN

AS6C1008-55STIN is a static random access memory (SRAM), which is a type of synchronous semiconductor memory. Its working principle is based on a cell array composed of an NMOS transistor and a resister, as shown in the figure below. When the chip is powered up and the chip select is activated, the address is provided in a decoding way. Inside each cell of the chip, the two transistors act as a two-way switch, which can simultaneously read and write data through the two transistors.When a "1" current is sent along bit line 0 and bit line 1, the two transistors are turned on and the connecting resistance is conduction and the data is read out. When a current with a value of "0" is sent, the resistance between the two transistors is non-conduction and the data can be written.Accordingly, by sending different bit line values, different signals will be output, and thus the data reading and writing tasks can be completed. The AS6C1008-55STIN is also equipped with an inhibit circuit, which is managed by the chip-select and write-enable pins. When the chip-select pin is low and the write-enable pin is low, the inhibit circuit is activated and the SRAM will ignore other external signals to block the data read and write operations.The AS6C1008-55STIN SRAM also has a built-in power-down feature. When the power-down signal is detected, the VRDIS pin is activated and the chip will power itself down and enter idle mode. This feature can improve the system power and energy efficiency and helps to increase the battery life in mobile applications.In addition, AS6C1008-55STIN also provides a variety of protection and reliability features, such as on-chip ECC (Error Correction Code) codes, which help to reduce the rate of error and protect system safety. All in all, AS6C1008-55STIN has a wide range of applications and uses, and offers many advantages such as low power, high speed, high stability and high reliability.

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