AS6C1008-55TIN Allicdata Electronics
Allicdata Part #:

1450-1020-ND

Manufacturer Part#:

AS6C1008-55TIN

Price: $ 1.53
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC SRAM 1M PARALLEL 32TSOP I
More Detail: SRAM - Asynchronous Memory IC 1Mb (128K x 8) Paral...
DataSheet: AS6C1008-55TIN datasheetAS6C1008-55TIN Datasheet/PDF
Quantity: 515
1 +: $ 1.39230
10 +: $ 1.25370
25 +: $ 1.23379
50 +: $ 1.23039
156 +: $ 1.09943
312 +: $ 1.06369
624 +: $ 1.05972
1092 +: $ 0.98696
5148 +: $ 0.89303
Stock 515Can Ship Immediately
$ 1.53
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 1Mb (128K x 8)
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 32-TSOP I
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The AS6C1008-55TIN is a type of SRAM (static random access memory) device. It has 8K x 8 bits of memory, a wide operating temperature range, and a wide range of industrial applications. It is a popular choice among application developers because of its high performance and cost-effectiveness.

In terms of its application field, the AS6C1008-55TIN is a widely used choice for embedded applications including industrial control systems, medical imaging systems, consumer electronic products, security systems, and robotic systems. It is also suitable for automotive, avionic and military applications. These applications rely heavily on the memory capacity, low power requirements and reliable data storage that SRAMs offer.

The working principle behind the AS6C1008-55TIN is relatively simple. Using charge-coupled device (CCD) technology, the memory stores each bit of data in an eight-bit semiconductor device. This device can be connected in a chain, which allows for multiple memory locations to be accessed simultaneously. Each memory cell in the memory array contains a set of two transistors and two capacitors. The transistors are used to control the data flow, while the capacitors are used to store the data. This type of memory is often referred to as “non-volatile” because the data is not lost when the power is removed.

The AS6C1008-55TIN also features a fast access time and low power consumption, enabling it to efficiently store large amounts of data without sacrificing performance or application speed. As a result, it is a reliable choice for many industrial applications where time and power efficiency are key factors.

In terms of reliability, the AS6C1008-55TIN offers excellent performance and effectively meets the standards of environmental and quality control. This makes it an ideal choice for applications that require reliable data storage.

The AS6C1008-55TIN is an ideal choice for embedded applications where reliable and efficient data storage, high performance and cost-effectiveness are must-haves. Its wide operating temperature range, non-volatile data storage and low power requirements make it a popular choice for many industrial, automotive and avionic applications.

The specific data is subject to PDF, and the above content is for reference

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